1T1R nonvolatile memory with Al/TiO₂/Au and Sol-Gel-processed insulator for barium zirconate nickelate gate in pentacene thin film transistor

Engineering & Materials Science

• Barium zirconate 100%
• Gates (transistor) 72%
• Sol-gels 66%
• Thin film transistors 65%
• Leakage currents 32%
• Data storage equipment 31%
• Low power electronics 15%
• Threshold voltage 11%
• Electric properties 10%
• Resistors 9%
• Transistors 8%

Physics & Astronomy

• barium zirconates 79%
• random access memory 47%
• transistors 40%
• gels 39%
• insulators 37%
• acetylacetone 32%
• thin films 26%
• leakage 25%
• cells 16%
• resistors 10%
• low voltage 9%
• threshold voltage 9%
• substitutes 8%
• electrical properties 7%
• electronics 5%
• performance 4%

Chemical Compounds

• Pentacene 66%
• Nonconductor 57%
• Leakage Current 50%
• Acetylacetone 29%
• Dielectric Material 22%
• Field Effect 12%
• Electrical Property 10%
• Compound Mobility 9%
• Voltage 9%
• Resistance 8%