2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features

M. H. Liao, C. Y. Yu, C. F. Huang, C. H. Lin, C. J. Lee, M. H. Yu, S. T. Chang, C. Y. Liang, C. Y. Lee, T. H. Guo, C. C. Chang, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The Ge/Si heterojunction MOS LED can emit ∼2 μm light due to the radiative recombination at type II heterojunction. The fully depleted 800 nm germanium on insulator (GOI) can increase the responsivity and the speed of the MOS detector due to the large absorption of Ge and the electrical field in the active layer, respectively. Moreover, the external strain can tune the emission energy (∼11 meV) by modifying the band structure. The responsivity of GOI MOS detector is also improved by ∼10% using the external strain. Both heterojunction and strain (internal or external) can enhance the performance of Si-based optoelectronics.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages1001-1004
Number of pages4
Publication statusPublished - 2005 Dec 1
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 2005 Dec 52005 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05-12-0505-12-07

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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