2-D-3-D switchable gate driver circuit for TFT-LCD applications

Chih Lung Lin, Mao Hsun Cheng, Chun Da Tu, Chia Che Hung, Jhin Yu Li

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

This paper presents a novel 2-D-3-D switchable gate driver circuit for active-matrix liquid crystal displays (AMLCDs) applications using the hydrogenated amorphous silicon (a-Si:H) technology. While consisting of 12 thin-film transistors (TFTs), the proposed gate driver circuit includes a pull-up circuit, two alternative circuits, and a key pull-down circuit. To provide a stable output waveform for switching between the 2-D and 3-D modes in AMLCD panel, the proposed circuit can improve the threshold voltage shift of a-Si:H TFT using reversed bias stress. Based on a real circuit integrated on glass with a standard fivemask process applied to a large-sized FHD TFT-LCD panel, the layout area of each gate driver circuit is 359.25 μm × 2296.25 μm. In addition, the power consumption of a 12-stage gate driver circuit is 3.25 and 7.21 mW, while operating at 2-D and 3-D modes, respectively. Measurement results indicate that the output waveform, including output voltage, rising time, and falling time can be stabilized and made almost equal to the initial state after the reliability test at 100 °C over 240 h.

Original languageEnglish
Article number6810190
Pages (from-to)2098-2105
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number6
DOIs
Publication statusPublished - 2014 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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