20.63 % nPERT cells and 20% PR gain bifacial module

Shu Hung Yu, Chih Jeng Huang, Po Tsung Hsieh, Hung Chih Chang, Wei Cheng Mo, Zih Wei Peng, Chun Wen Lai, Chi Chun Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

In this study, comprehensive efforts were conducted to improve conversion efficiency for n-type passivated emitter, rear totally-diffused (nPERT) cells. Key technologies such as boron emitter, phosphorous back surface field (BSF), KOH texturization, and metallization were all investigated and optimized. nPERT cells with 20.63 % efficiency were successfully produced with processes based on homogeneous diffusion and screen-printed metallization. To our knowledge, this is the highest demonstrated efficiency for nPERT cells using boron diffusion. Additionally, we report outdoor performance of a bifacial module made with our nPERT cells, which indicates a performance ratio (PR) gain of more than 20% compared with a conventional p-type module.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2134-2137
Number of pages4
ISBN (Electronic)9781479943982
DOIs
Publication statusPublished - 2014 Oct 15
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 2014 Jun 82014 Jun 13

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period14-06-0814-06-13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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