2×2 thermo-optic silicon oxynitride optical switch based on the integrated multimode interference waveguides

Wen-Kuei Chuang, Zhen Liang Liao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A multistage SiO2 /SiON/ SiO2 2×2 optical switch utilizing the multimode interference effect is proposed. The entire switching is realized based on the thermo-optic effect of SiO2 /SiON dielectric layers. The heating power required to switch the optical beam from bar to cross state is determined to be ∼0.82 W. The highest extinction coefficient achieved during the optical switching between bar and cross output channels is in excess of 13 dB. Furthermore, the experimental results show that the rise and fall times of this device measured approximately 360 and 395 μs, respectively.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number2
DOIs
Publication statusPublished - 2010 Jan 15

Fingerprint

Optical switches
Silicon
Optics
Waveguides
Switches
Heating

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "A multistage SiO2 /SiON/ SiO2 2×2 optical switch utilizing the multimode interference effect is proposed. The entire switching is realized based on the thermo-optic effect of SiO2 /SiON dielectric layers. The heating power required to switch the optical beam from bar to cross state is determined to be ∼0.82 W. The highest extinction coefficient achieved during the optical switching between bar and cross output channels is in excess of 13 dB. Furthermore, the experimental results show that the rise and fall times of this device measured approximately 360 and 395 μs, respectively.",
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AB - A multistage SiO2 /SiON/ SiO2 2×2 optical switch utilizing the multimode interference effect is proposed. The entire switching is realized based on the thermo-optic effect of SiO2 /SiON dielectric layers. The heating power required to switch the optical beam from bar to cross state is determined to be ∼0.82 W. The highest extinction coefficient achieved during the optical switching between bar and cross output channels is in excess of 13 dB. Furthermore, the experimental results show that the rise and fall times of this device measured approximately 360 and 395 μs, respectively.

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