Abstract
High-speed direct modulation of semiconductor lasers has important applications in optical communications. However, the maximum bandwidth for a free-running laser is limited by the K factor. It is demonstrated that the modulation bandwidth can be increased significantly through the injection locking technique, which even exceeds the limitation set by the K factor. This paper experimentally demonstrates that, by using the injection locking method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is achieved in 1.3-μm DFB lasers.
| Original language | English |
|---|---|
| Pages | 710-711 |
| Number of pages | 2 |
| Publication status | Published - 2003 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering