3D RGB light emitting diodes prepared by through silicon via technology

Chun Liang Lu, Shoou-Jinn Chang, Wei Shou Chen, Ting Jen Hsueh

Research output: Contribution to journalArticle

Abstract

A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 C) operates is lower than that for a LED (120 C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.

Original languageEnglish
Pages (from-to)R156-R159
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number9
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Light emitting diodes
Silicon
Cathodes
Three dimensional integrated circuits
Electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Lu, Chun Liang ; Chang, Shoou-Jinn ; Chen, Wei Shou ; Hsueh, Ting Jen. / 3D RGB light emitting diodes prepared by through silicon via technology. In: ECS Journal of Solid State Science and Technology. 2018 ; Vol. 7, No. 9. pp. R156-R159.
@article{4303c6be0b55442c9598e12a6dd75d08,
title = "3D RGB light emitting diodes prepared by through silicon via technology",
abstract = "A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.",
author = "Lu, {Chun Liang} and Shoou-Jinn Chang and Chen, {Wei Shou} and Hsueh, {Ting Jen}",
year = "2018",
month = "1",
day = "1",
doi = "10.1149/2.0281809jss",
language = "English",
volume = "7",
pages = "R156--R159",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

3D RGB light emitting diodes prepared by through silicon via technology. / Lu, Chun Liang; Chang, Shoou-Jinn; Chen, Wei Shou; Hsueh, Ting Jen.

In: ECS Journal of Solid State Science and Technology, Vol. 7, No. 9, 01.01.2018, p. R156-R159.

Research output: Contribution to journalArticle

TY - JOUR

T1 - 3D RGB light emitting diodes prepared by through silicon via technology

AU - Lu, Chun Liang

AU - Chang, Shoou-Jinn

AU - Chen, Wei Shou

AU - Hsueh, Ting Jen

PY - 2018/1/1

Y1 - 2018/1/1

N2 - A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.

AB - A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.

UR - http://www.scopus.com/inward/record.url?scp=85059946604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059946604&partnerID=8YFLogxK

U2 - 10.1149/2.0281809jss

DO - 10.1149/2.0281809jss

M3 - Article

AN - SCOPUS:85059946604

VL - 7

SP - R156-R159

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 9

ER -