3D RGB light emitting diodes prepared by through silicon via technology

Chun Liang Lu; Shoou Jinn Chang; Wei Shou Chen; Ting Jen Hsueh

doi:10.1149/2.0281809jss

3D RGB light emitting diodes prepared by through silicon via technology

Chun Liang Lu, Shoou Jinn Chang, Wei Shou Chen, Ting Jen Hsueh

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ^◦ C) operates is lower than that for a LED (120 ^◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.

Original language	English
Pages (from-to)	R156-R159
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	9
DOIs	https://doi.org/10.1149/2.0281809jss
Publication status	Published - 2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.0281809jss

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title = "3D RGB light emitting diodes prepared by through silicon via technology",

abstract = " A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.",

author = "Lu, {Chun Liang} and Chang, {Shoou Jinn} and Chen, {Wei Shou} and Hsueh, {Ting Jen}",

note = "Funding Information: This work was supported in part by the Ministry of Science and Technology, Taiwan 106-2221-E-992 -372 -MY3; National Nano Devices Laboratories, Tainan, Taiwan. Publisher Copyright: {\textcopyright} 2018 The Electrochemical Society.",

year = "2018",

doi = "10.1149/2.0281809jss",

language = "English",

volume = "7",

pages = "R156--R159",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

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T1 - 3D RGB light emitting diodes prepared by through silicon via technology

AU - Lu, Chun Liang

AU - Chang, Shoou Jinn

AU - Chen, Wei Shou

AU - Hsueh, Ting Jen

N1 - Funding Information: This work was supported in part by the Ministry of Science and Technology, Taiwan 106-2221-E-992 -372 -MY3; National Nano Devices Laboratories, Tainan, Taiwan. Publisher Copyright: © 2018 The Electrochemical Society.

PY - 2018

Y1 - 2018

N2 - A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.

AB - A common cathode 3D RGB light emitting diode chip is produced using through silicon via (TSV) technology. The experimental results show that the diameter, the length and the depth of the Si via are about 140 μm, 50 nm and 320 μm, respectively. The Cu is uniform with a high density in each TSV and the average resistance is about 0.61 m. The measurement of the thermal images shows that the temperature at which a 3D LED (105 ◦ C) operates is lower than that for a LED (120 ◦ C) when the two devices are injected with a 20 mA current. Using 20 mA current injections, the current-voltage (I-V) output for 3D RGB LED chips is on average 218.84 mW/W, 186.65 mW/W and 324.49 mW/W.

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3D RGB light emitting diodes prepared by through silicon via technology

Abstract

All Science Journal Classification (ASJC) codes

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