400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes

S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

400 nm In0.05Ga0.95N/GaN MQW light emitting diode (LED) structure and In0.05Ga0.95N/Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy (OMVPE). It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20 mA electroluminescence (EL) intensity of InGaN/AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages91-94
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
DOIs
Publication statusPublished - 2003 Jan 1
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 2003 Sep 122003 Sep 14

Publication series

NameProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Other

Other6th Chinese Optoelectronics Symposium, COES 2003
CountryChina
CityHong Kong
Period03-09-1203-09-14

Fingerprint

Light emitting diodes
Vapor phase epitaxy
Epitaxial layers
Electroluminescence
Organometallics
Leakage currents
Crystals
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chang, S. J., Kuo, C. H., Su, Y. K., Wu, L. W., Sheu, J. K., Wen, T. C., ... Tsai, J. M. (2003). 400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes. In K. T. Chan, & H. S. Kwok (Eds.), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003 (pp. 91-94). [1278172] (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COS.2003.1278172
Chang, S. J. ; Kuo, C. H. ; Su, Y. K. ; Wu, L. W. ; Sheu, J. K. ; Wen, T. C. ; Lai, W. C. ; Chen, J. F. ; Tsai, J. M. / 400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes. Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. editor / K. T. Chan ; H. S. Kwok. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 91-94 (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003).
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title = "400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes",
abstract = "400 nm In0.05Ga0.95N/GaN MQW light emitting diode (LED) structure and In0.05Ga0.95N/Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy (OMVPE). It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20 mA electroluminescence (EL) intensity of InGaN/AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.",
author = "Chang, {S. J.} and Kuo, {C. H.} and Su, {Y. K.} and Wu, {L. W.} and Sheu, {J. K.} and Wen, {T. C.} and Lai, {W. C.} and Chen, {J. F.} and Tsai, {J. M.}",
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Chang, SJ, Kuo, CH, Su, YK, Wu, LW, Sheu, JK, Wen, TC, Lai, WC, Chen, JF & Tsai, JM 2003, 400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes. in KT Chan & HS Kwok (eds), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003., 1278172, Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003, Institute of Electrical and Electronics Engineers Inc., pp. 91-94, 6th Chinese Optoelectronics Symposium, COES 2003, Hong Kong, China, 03-09-12. https://doi.org/10.1109/COS.2003.1278172

400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes. / Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; Sheu, J. K.; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M.

Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. ed. / K. T. Chan; H. S. Kwok. Institute of Electrical and Electronics Engineers Inc., 2003. p. 91-94 1278172 (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - 400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes

AU - Chang, S. J.

AU - Kuo, C. H.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Sheu, J. K.

AU - Wen, T. C.

AU - Lai, W. C.

AU - Chen, J. F.

AU - Tsai, J. M.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - 400 nm In0.05Ga0.95N/GaN MQW light emitting diode (LED) structure and In0.05Ga0.95N/Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy (OMVPE). It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20 mA electroluminescence (EL) intensity of InGaN/AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

AB - 400 nm In0.05Ga0.95N/GaN MQW light emitting diode (LED) structure and In0.05Ga0.95N/Al0.1Ga0.9N LED structure were both prepared by organometallic vapor phase epitaxy (OMVPE). It was found that the use of Al0.1Ga0.9N as the material for barrier layers would not degrade crystal quality of the epitaxial layers. It was also found that the 20 mA electroluminescence (EL) intensity of InGaN/AlGaN multiquantum well (MQW) LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum output intensity and the fact that maximum output intensity occurred at larger injection current suggest that AlGaN barrier layers can provide a better carrier confinement and effectively reduce leakage current.

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U2 - 10.1109/COS.2003.1278172

DO - 10.1109/COS.2003.1278172

M3 - Conference contribution

AN - SCOPUS:84945587473

T3 - Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

SP - 91

EP - 94

BT - Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

A2 - Chan, K. T.

A2 - Kwok, H. S.

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Chang SJ, Kuo CH, Su YK, Wu LW, Sheu JK, Wen TC et al. 400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes. In Chan KT, Kwok HS, editors, Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 91-94. 1278172. (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003). https://doi.org/10.1109/COS.2003.1278172