460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing

Chia Ta Chang; Shih Kuang Hsiao; Edward Yi Chang; Yu Lin Hsiao; Jui Chien Huang; Chung Yu Lu; Huang Choung Chang; Kai Wen Cheng; Ching Ting Lee

doi:10.1109/LPT.2009.2026728

460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing

Chia Ta Chang, Shih Kuang Hsiao, Edward Yi Chang, Yu Lin Hsiao, Jui Chien Huang, Chung Yu Lu, Huang Choung Chang, Kai Wen Cheng, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape- patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.

Original language	English
Pages (from-to)	1366-1368
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2009.2026728
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2009.2026728

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@article{58efe9710c944f9598f54bd34d7fc052,

title = "460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing",

abstract = "This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape- patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.",

author = "Chang, {Chia Ta} and Hsiao, {Shih Kuang} and Chang, {Edward Yi} and Hsiao, {Yu Lin} and Huang, {Jui Chien} and Lu, {Chung Yu} and Chang, {Huang Choung} and Cheng, {Kai Wen} and Lee, {Ching Ting}",

note = "Funding Information: Manuscript received April 30, 2009; revised June 11, 2009. First published July 17, 2009; current version published September 11, 2009. This work was supported by the National Science Council under Contracts NSC 98-2923-E-009-002-MY3.",

year = "2009",

doi = "10.1109/LPT.2009.2026728",

language = "English",

volume = "21",

pages = "1366--1368",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - 460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing

AU - Chang, Chia Ta

AU - Hsiao, Shih Kuang

AU - Chang, Edward Yi

AU - Hsiao, Yu Lin

AU - Huang, Jui Chien

AU - Lu, Chung Yu

AU - Chang, Huang Choung

AU - Cheng, Kai Wen

AU - Lee, Ching Ting

N1 - Funding Information: Manuscript received April 30, 2009; revised June 11, 2009. First published July 17, 2009; current version published September 11, 2009. This work was supported by the National Science Council under Contracts NSC 98-2923-E-009-002-MY3.

PY - 2009

Y1 - 2009

N2 - This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape- patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.

AB - This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape- patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing

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