460-nm InGaN-based LEDs grown on fully inclined hemisphere-shape-patterned sapphire substrate with submicrometer spacing

Chia Ta Chang, Shih Kuang Hsiao, Edward Yi Chang, Yu Lin Hsiao, Jui Chien Huang, Chung Yu Lu, Huang Choung Chang, Kai Wen Cheng, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

This letter investigates 460-nm InGaN-based light-emitting diodes (LEDs) grown on a hemisphere-shape- patterned sapphire substrate (HPSS) with submicrometer spacing. The full-width at half-maximum of the (102) plane rocking curves for GaN layer grown on a conventional sapphire substrate (CSS) and HPSS are 480 and 262 arcsec, respectively. Such improvement is due to the reduction of the pure edge threading dislocations. At the forward current of 20 mA, the light output power of the LEDs grown on CSS and HPSS were 4.05 and 5.86 mW, respectively. This improvement of 44% light-output power can be attributed to the improved quality of the material and the increase of the light extraction by the fully inclined facets of the HPSS.

Original languageEnglish
Pages (from-to)1366-1368
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number19
DOIs
Publication statusPublished - 2009 Oct 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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