A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (V br) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering