4H-SiC nano-pillar avalanche photodiode with illumination-dependent characteristics

Rongdun Hong, Yi Zhou, Kang Long Wang, Zhengyun Wu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (V br) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.

Original languageEnglish
Article number5744096
Pages (from-to)816-818
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number12
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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