4H-SiC nano-pillar avalanche photodiode with illumination-dependent characteristics

Rongdun Hong; Yi Zhou; Kang Long Wang; Zhengyun Wu

doi:10.1109/LPT.2011.2140391

4H-SiC nano-pillar avalanche photodiode with illumination-dependent characteristics

Rongdun Hong, Yi Zhou, Kang Long Wang, Zhengyun Wu

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (V _br) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.

Original language	English
Article number	5744096
Pages (from-to)	816-818
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2011.2140391
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2011.2140391

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abstract = "A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (V br) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.",

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AU - Zhou, Yi

AU - Wang, Kang Long

AU - Wu, Zhengyun

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Y1 - 2011

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AB - A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (V br) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.

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4H-SiC nano-pillar avalanche photodiode with illumination-dependent characteristics

Abstract

All Science Journal Classification (ASJC) codes

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