5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

Yeong Lin Lai; Edward Y. Chang; Chun Yen Chang; T. K. Chen; T. H. Liu; S. P. Wang; T. H. Chen; C. T. Lee

doi:10.1109/55.491838

5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

Yeong Lin Lai
, Edward Y. Chang
, Chun Yen Chang
, T. K. Chen
, T. H. Liu
, S. P. Wang
, T. H. Chen
, C. T. Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at V_gs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

Original language	English
Pages (from-to)	229-231
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	5
DOIs	https://doi.org/10.1109/55.491838
Publication status	Published - 1996 May

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.491838

Cite this

@article{c24077106be24986acc12db53da10724,

title = "5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications",

abstract = "A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64\% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.",

author = "Lai, \{Yeong Lin\} and Chang, \{Edward Y.\} and Chang, \{Chun Yen\} and Chen, \{T. K.\} and Liu, \{T. H.\} and Wang, \{S. P.\} and Chen, \{T. H.\} and Lee, \{C. T.\}",

note = "Funding Information: Manuscript received November 14, 1995; revised January 9, 1996. This work was supported in part by the National Science Council, Republic of China, under Contract NSC-84-2215-E009-024. Y.-L. Lai is with the Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC. E. Y. Chang and T. K. Chen are with the Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, ROC. C.-Y. Chang is with the Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, and National Nano Device Laboratories, Hsinchu 300, Taiwan, ROC. T. H. Liu, S. P. Wang, and T. H. Chen are with Hexawave Photonic Systems, Inc., Hsinchu 300, Taiwan, ROC. C. T. Lee is with the Institute of Optical Sciences, National Cental University, Chungli 320, Taiwan, ROC. Publisher Item Identifier S 0741-3 106(96)03737-8.",

year = "1996",

month = may,

doi = "10.1109/55.491838",

language = "English",

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pages = "229--231",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

AU - Lai, Yeong Lin

AU - Chang, Edward Y.

AU - Chang, Chun Yen

AU - Chen, T. K.

AU - Liu, T. H.

AU - Wang, S. P.

AU - Chen, T. H.

AU - Lee, C. T.

N1 - Funding Information: Manuscript received November 14, 1995; revised January 9, 1996. This work was supported in part by the National Science Council, Republic of China, under Contract NSC-84-2215-E009-024. Y.-L. Lai is with the Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC. E. Y. Chang and T. K. Chen are with the Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, ROC. C.-Y. Chang is with the Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, and National Nano Device Laboratories, Hsinchu 300, Taiwan, ROC. T. H. Liu, S. P. Wang, and T. H. Chen are with Hexawave Photonic Systems, Inc., Hsinchu 300, Taiwan, ROC. C. T. Lee is with the Institute of Optical Sciences, National Cental University, Chungli 320, Taiwan, ROC. Publisher Item Identifier S 0741-3 106(96)03737-8.

PY - 1996/5

Y1 - 1996/5

N2 - A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

AB - A high-power-density dual-δ-doped AlGaAs/ InGaAs/GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. the 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at Vgs = 0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-δ-doped AlGaAs/InGaAs/GaAs HEMT reported to date for low voltage (3 V) wireless applications.

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DO - 10.1109/55.491838

M3 - Article

AN - SCOPUS:0030150086

SN - 0741-3106

VL - 17

SP - 229

EP - 231

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

Abstract

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