642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

S. J. Chang; C. S. Chang

doi:10.1109/68.669229

642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

S. J. Chang, C. S. Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature T_o of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).

Original language	English
Pages (from-to)	651-653
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	5
DOIs	https://doi.org/10.1109/68.669229
Publication status	Published - 1998 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.669229

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title = "642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer",

abstract = "For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature To of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).",

author = "Chang, {S. J.} and Chang, {C. S.}",

note = "Funding Information: Manuscript received July 14, 1997; revised December 22, 1997. This work was supported by the National Science Council under Contract NSC-86 2622-E-006-005R. The authors are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)03016-X.",

year = "1998",

month = may,

doi = "10.1109/68.669229",

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journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - 642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

AU - Chang, S. J.

AU - Chang, C. S.

N1 - Funding Information: Manuscript received July 14, 1997; revised December 22, 1997. This work was supported by the National Science Council under Contract NSC-86 2622-E-006-005R. The authors are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)03016-X.

PY - 1998/5

Y1 - 1998/5

N2 - For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature To of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).

AB - For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LD's with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm× 800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature To of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 5

ER -

642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

Abstract

All Science Journal Classification (ASJC) codes

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