TY - JOUR
T1 - 650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes
AU - Chang, Shoou Jinn
AU - Chang, Chih Sung
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1998
Y1 - 1998
N2 - We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.
AB - We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.
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U2 - 10.1143/jjap.37.l653
DO - 10.1143/jjap.37.l653
M3 - Article
AN - SCOPUS:0032093810
SN - 0021-4922
VL - 37
SP - L653-L655
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 A
ER -