650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes

Shoou Jinn Chang, Chih Sung Chang

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.

Original languageEnglish
Pages (from-to)L653-L655
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number6 A
DOIs
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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