650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes

Shoou Jinn Chang; Chih Sung Chang

doi:10.1143/jjap.37.l653

650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes

Shoou Jinn Chang, Chih Sung Chang

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.

Original language	English
Pages (from-to)	L653-L655
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.37.l653
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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title = "650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes",

abstract = "We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.",

author = "Chang, {Shoou Jinn} and Chang, {Chih Sung}",

year = "1998",

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AU - Chang, Shoou Jinn

AU - Chang, Chih Sung

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AB - We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer, we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.

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