75-110-GHz W-band High-Linearity Traveling-Wave T/R Switch by Using Negative Gate/Body-Biasing in 90-nm CMOS

Wen Chian Lai, Chien Chang Chou, Shih Chiao Huang, Tzuen-Hsi Huang, Huey-Ru Chuang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this letter, a 75-110-GHz W-band high-linearity traveling-wave single-pole-double-throw switch in 90-nm CMOS GUTM 1P9M is presented. Compared with the traditional traveling-wave switch with negative body-biasing technique, the proposed design applies the negative biasing to the gate terminals simultaneously. Therefore, the third-order intermodulation product is significantly reduced. The measured results show that the insertion loss is less than 3.4 dB, return loss is better than 10 dB, and Tx-to-Rx isolation is higher than 40 dB, respectively. For the linearity of the switch, the measured IP1dB is higher than 15 dBm and IIP3 is 37.1 dBm at 94 GHz, respectively. The proposed switch presents good performance of insertion loss, isolation, IP1dB, and IIP3, among the compared millimeter-wave CMOS switches.

Original languageEnglish
Article number7907186
Pages (from-to)488-490
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume27
Issue number5
DOIs
Publication statusPublished - 2017 May 1

Fingerprint

traveling waves
linearity
CMOS
switches
Switches
Insertion losses
insertion loss
isolation
Intermodulation
intermodulation
Millimeter waves
millimeter waves
Poles
poles
products

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "75-110-GHz W-band High-Linearity Traveling-Wave T/R Switch by Using Negative Gate/Body-Biasing in 90-nm CMOS",
abstract = "In this letter, a 75-110-GHz W-band high-linearity traveling-wave single-pole-double-throw switch in 90-nm CMOS GUTM 1P9M is presented. Compared with the traditional traveling-wave switch with negative body-biasing technique, the proposed design applies the negative biasing to the gate terminals simultaneously. Therefore, the third-order intermodulation product is significantly reduced. The measured results show that the insertion loss is less than 3.4 dB, return loss is better than 10 dB, and Tx-to-Rx isolation is higher than 40 dB, respectively. For the linearity of the switch, the measured IP1dB is higher than 15 dBm and IIP3 is 37.1 dBm at 94 GHz, respectively. The proposed switch presents good performance of insertion loss, isolation, IP1dB, and IIP3, among the compared millimeter-wave CMOS switches.",
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75-110-GHz W-band High-Linearity Traveling-Wave T/R Switch by Using Negative Gate/Body-Biasing in 90-nm CMOS. / Lai, Wen Chian; Chou, Chien Chang; Huang, Shih Chiao; Huang, Tzuen-Hsi; Chuang, Huey-Ru.

In: IEEE Microwave and Wireless Components Letters, Vol. 27, No. 5, 7907186, 01.05.2017, p. 488-490.

Research output: Contribution to journalArticle

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AU - Lai, Wen Chian

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AB - In this letter, a 75-110-GHz W-band high-linearity traveling-wave single-pole-double-throw switch in 90-nm CMOS GUTM 1P9M is presented. Compared with the traditional traveling-wave switch with negative body-biasing technique, the proposed design applies the negative biasing to the gate terminals simultaneously. Therefore, the third-order intermodulation product is significantly reduced. The measured results show that the insertion loss is less than 3.4 dB, return loss is better than 10 dB, and Tx-to-Rx isolation is higher than 40 dB, respectively. For the linearity of the switch, the measured IP1dB is higher than 15 dBm and IIP3 is 37.1 dBm at 94 GHz, respectively. The proposed switch presents good performance of insertion loss, isolation, IP1dB, and IIP3, among the compared millimeter-wave CMOS switches.

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