TY - JOUR
T1 - 75-110-GHz W-band High-Linearity Traveling-Wave T/R Switch by Using Negative Gate/Body-Biasing in 90-nm CMOS
AU - Lai, Wen Chian
AU - Chou, Chien Chang
AU - Huang, Shih Chiao
AU - Huang, Tzuen Hsi
AU - Chuang, Huey Ru
N1 - Funding Information:
This work was supported by the National Science Council and Ministry of Science and Technology of Taiwan, R.O.C., under Grant NSC102-2221-E-006-274-MY3 and Grant MOST 105-2221-E-006-244.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/5
Y1 - 2017/5
N2 - In this letter, a 75-110-GHz W-band high-linearity traveling-wave single-pole-double-throw switch in 90-nm CMOS GUTM 1P9M is presented. Compared with the traditional traveling-wave switch with negative body-biasing technique, the proposed design applies the negative biasing to the gate terminals simultaneously. Therefore, the third-order intermodulation product is significantly reduced. The measured results show that the insertion loss is less than 3.4 dB, return loss is better than 10 dB, and Tx-to-Rx isolation is higher than 40 dB, respectively. For the linearity of the switch, the measured IP1dB is higher than 15 dBm and IIP3 is 37.1 dBm at 94 GHz, respectively. The proposed switch presents good performance of insertion loss, isolation, IP1dB, and IIP3, among the compared millimeter-wave CMOS switches.
AB - In this letter, a 75-110-GHz W-band high-linearity traveling-wave single-pole-double-throw switch in 90-nm CMOS GUTM 1P9M is presented. Compared with the traditional traveling-wave switch with negative body-biasing technique, the proposed design applies the negative biasing to the gate terminals simultaneously. Therefore, the third-order intermodulation product is significantly reduced. The measured results show that the insertion loss is less than 3.4 dB, return loss is better than 10 dB, and Tx-to-Rx isolation is higher than 40 dB, respectively. For the linearity of the switch, the measured IP1dB is higher than 15 dBm and IIP3 is 37.1 dBm at 94 GHz, respectively. The proposed switch presents good performance of insertion loss, isolation, IP1dB, and IIP3, among the compared millimeter-wave CMOS switches.
UR - http://www.scopus.com/inward/record.url?scp=85018645659&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85018645659&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2017.2690837
DO - 10.1109/LMWC.2017.2690837
M3 - Article
AN - SCOPUS:85018645659
SN - 1531-1309
VL - 27
SP - 488
EP - 490
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 5
M1 - 7907186
ER -