TY - GEN
T1 - 88-96 GHz VCO with Inductance-Compensated Capacitive Source Degeneration in 90-nm CMOS
AU - Li, Hsin
AU - Huang, Tzuen Hsi
AU - Chuang, Huey Ru
N1 - Funding Information:
ACKNOWLEDGMENT The authors would like to thank the Taiwan Semiconductor Manufacturing Company (TSMC) University Shuttle Program for chip fabrication support and the Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan, for supporting the TSMC CMOS process and chip implementation.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/8/25
Y1 - 2021/8/25
N2 - A 94-GHz voltage-controlled oscillator (VCO) using inductance-compensated capacitive source degeneration (IC-CSD) technique to widen the tuning range is presented. This work has been implemented in 90-nm CMOS technology with a chip area of 0.257 mm2. The measured output frequency of the VCO covers a range of 7.99 GHz from 87.99 to 95.98 GHz (8.7% tuning range) and delivers +5.2-dBm maximum output power at 94 GHz. At 94 GHz, the measured phase noises at 1-MHz and 10-MHz frequency offsets are-71.72 and-96.51 dBc/Hz, respectively. The total power dissipation is 85.08 mW while the VCO core and the drive amplifier draw 30.36 mW and 54.72 mW from 1.2-V and 2.4-V power supplies, respectively.
AB - A 94-GHz voltage-controlled oscillator (VCO) using inductance-compensated capacitive source degeneration (IC-CSD) technique to widen the tuning range is presented. This work has been implemented in 90-nm CMOS technology with a chip area of 0.257 mm2. The measured output frequency of the VCO covers a range of 7.99 GHz from 87.99 to 95.98 GHz (8.7% tuning range) and delivers +5.2-dBm maximum output power at 94 GHz. At 94 GHz, the measured phase noises at 1-MHz and 10-MHz frequency offsets are-71.72 and-96.51 dBc/Hz, respectively. The total power dissipation is 85.08 mW while the VCO core and the drive amplifier draw 30.36 mW and 54.72 mW from 1.2-V and 2.4-V power supplies, respectively.
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U2 - 10.1109/RFIT52905.2021.9565247
DO - 10.1109/RFIT52905.2021.9565247
M3 - Conference contribution
AN - SCOPUS:85118150519
T3 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
BT - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Y2 - 25 August 2021 through 27 August 2021
ER -