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2017
4 Citations (Scopus)

Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment

Lee, C. S., Liu, H. Y., Hsu, W. C. & Chen, S. F., 2017 Mar 1, In : Materials Science in Semiconductor Processing. 59, p. 1-4 4 p.

Research output: Contribution to journalArticle

Ozone water treatment
water treatment
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
2020

Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel

Lee, C. S., Shen, Y. T., Hsu, W. C., Huang, Y. P. & You, C. Y., 2020 Jan 1, In : IEEE Journal of the Electron Devices Society. 8, p. 9-14 6 p., 8917644.

Research output: Contribution to journalArticle

Open Access
Semiconductors
High electron mobility transistors
Electric breakdown
Oxides
Metals
2019
1 Citation (Scopus)

Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Huang, Y. P., Hsu, W-C., Liu, H. Y. & Lee, C. S., 2019 Jun 1, In : IEEE Electron Device Letters. 40, 6, p. 929-932 4 p., 8693634.

Research output: Contribution to journalArticle

Spray pyrolysis
Gate dielectrics
Drain current
Electric breakdown
Threshold voltage
2018
3 Citations (Scopus)

Comparative Study on Graded-Barrier AlxGa1-xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

Lee, C. S., Hsu, W. C., Huang, Y. P., Liu, H. Y., Yang, W. L. & Yang, S. T., 2018 Apr 26, In : Semiconductor Science and Technology. 33, 6, 065004.

Research output: Contribution to journalArticle

Spray pyrolysis
High electron mobility transistors
metal oxide semiconductors
pyrolysis
sprayers
2016
1 Citation (Scopus)

Investigation of post oxidation annealing effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

Liu, H. Y., Ou, W. C. & Hsu, W. C., 2016 Sep, In : IEEE Journal of the Electron Devices Society. 4, 5, p. 358-364 7 p., 7523248.

Research output: Contribution to journalArticle

Semiconductors
Oxides
Metals
Electrons
Annealing
2017

Simulation based study of oxygen plasma induced defects on zigzag graphene nanoribbons

Chen, P. A., Lee, J. W., Chiang, M. H. & Hsu, W. C., 2017 Jan 1, ECS Transactions. Bhansali, S., Brankovic, S., Buttry, D. A., Chu, D., Imahori, H., Katayama, H., Leonte, O., Mukerjee, S., Mukundan, R., Oren, Y., Romankiw, L., Sharma, N., Simonian, A., Trulove, P. C., Vaughey, J. T., Winter, M., Bartlett, P. N., Di Noto, V., Doeff, M., Druffel, T., Fenton, J. M., Fergus, J., Fukunaka, Y., Itagaki, M., Koehne, J., Kostecki, R., Lynch, R. P., Milosev, I., Narayan, S. R., Subramanian, V., Tatsuma, T., Wu, N., Chen, Z., Haverhals, L. M., Hesketh, P., Hillier, A. C., Inaba, M., Krumdick, G., Leddy, J., Manivannan, M., Maurice, V., Mitra, S., Muldoon, J., Noel, J., Rajeshwar, K., Subramanian, V. R., Suroviec, A. H., Suto, K., Zangari, G., Allongue, P., Birbilis, N., Boltalina, O. V., Calabrese Barton, S., Chaitanya, V., Chidambaram, D., Hite, J. K., Lee, J. J., Mantz, R. A., Mauzeroll, J., Minteer, S. D., Orazem, M. E., Ramasamy, R. P., Riemer, D. P., Roeper, D., Rohwerder, M., Sailor, M. J., Schwartz, D. T., Staser, J. A., Wu, G., Xu, H., Alkire, R., Anderson, T. J., Bayachou, M., Bocarsly, A. B., Choi, J. W., Innocenti, M., Kilgore, S. H., Kim, D. J., Kulesza, P. J., Lu, Y. C., Marcus, P., Mauter, M., Nicholas, J. D., Pylypenko, S., Rhodes, C., Soleymani, L., Tao, M., Xing, Y., Abbott, A. P., Chin, B. A., Cliffel, D. E., Douglas, E. A., Edstrom, K., Hamada, H., McMurray, H. N., Meng, Y. S., Miller, E. L., Navaei, M., Nonnenmann, S. S., O'Dwyer, C., Pharkya, P., Rotkin, S. V., Rupp, J. L. M., Williams, G., Bock, C., Buchheit, R., Cheek, G. T., Deligianni, H., Johnson, C., Park, J. G., Pintauro, P. N., Smith, K. C., Vanysek, P., Wang, H., Whitacre, J. F., Xiao, J., Carter, M. T., Dimitrov, N., Fransaer, J., Guyomard, D., Lucht, B. L., Nagahara, L., Natishan, P. M., Sekhar, P. K., Smith, D. K., Stafford, G. R., Sundaram, K. B., Vasiljevic, N., Virtanen, S., Wang, W., Wood, D. L. & Yang, J. J. (eds.). 10 ed. Electrochemical Society Inc., p. 463-471 9 p. (ECS Transactions; vol. 80, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nanoribbons
Graphene
Plasmas
Defects
Oxygen
6 Citations (Scopus)

Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique

Lee, C. S., Hsu, W. C., Chiang, B. J., Liu, H. Y. & Lee, H. Y., 2017 Apr 5, In : Semiconductor Science and Technology. 32, 5, 055012.

Research output: Contribution to journalArticle

Spray pyrolysis
High electron mobility transistors
Electric breakdown
metal oxide semiconductors
pyrolysis
2016
10 Citations (Scopus)

Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane

Liu, H. Y., Hsu, W. C., Chen, W. F., Lin, C. W., Li, Y. Y., Lee, C. S., Sun, W. C., Wei, S. Y. & Yu, S. M., 2016 May 15, In : IEEE Sensors Journal. 16, 10, p. 3514-3522 9 p., 7409941.

Research output: Contribution to journalArticle

Ion sensitive field effect transistors
pH sensors
High electron mobility transistors
Passivation
passivity
2 Citations (Scopus)

Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method

Lee, C. S., Hsu, W-C., Liu, H. Y., Tsai, J. H. & Huang, H. H., 2016 Apr 1, In : Japanese Journal of Applied Physics. 55, 4, 044102.

Research output: Contribution to journalArticle

MOSFET devices
High electron mobility transistors
high electron mobility transistors
Ozone
ozone
2017
3 Citations (Scopus)

Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures

Lee, C. S., Hsu, W-C., Liu, H. Y., Chen, S. F., Chen, Y. C. & Yang, S. T., 2017 Aug 1, In : Materials Science in Semiconductor Processing. 66, p. 39-43 5 p.

Research output: Contribution to journalArticle

High electron mobility transistors
high electron mobility transistors
Ions
Ozone
Gate dielectrics
1 Citation (Scopus)

Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT

Liu, H. Y., Lee, C. S., Lin, C. W., Chiang, M. H. & Hsu, W. C., 2017 Aug 1, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999446. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High electron mobility transistors
Threshold voltage
Fluorine
Doping (additives)
Gate dielectrics
1 Citation (Scopus)

All-zigzag graphene nanoribbons for planar interconnect application

Chen, P. A., Chiang, M. H. & Hsu, W. C., 2017 Jul 21, In : Journal of Applied Physics. 122, 3, 034301.

Research output: Contribution to journalArticle

lightning
graphene
eigenvectors
Green's functions
transport properties
1 Citation (Scopus)
high electron mobility transistors
metal oxide semiconductors
transconductance
electrical faults
leakage
2019

An RRAM with a 2D material embedded double switching layer for neuromorphic computing

Chen, P. A., Ge, R. J., Lee, J. W., Hsu, C. H., Hsu, W. C., Akinwande, D. & Chiang, M. H., 2019 Jan 8, 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 8605915. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

random access memory
oxygen ions
plastic properties
Plasticity
Ions
2018

Al₂O₃-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al₂O₃/TiO₂ Passivation Oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W. C., 2018 Jan 1, (Accepted/In press) In : IEEE Journal of the Electron Devices Society.

Research output: Contribution to journalArticle

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
2017
1 Citation (Scopus)

Al2O3-passivated graded-barrier AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor by hydrogen peroxide oxidization method

Lee, C. S., Hsu, W. C., Liu, H. Y. & Yang, S. T., 2017 Jan 1, In : ECS Journal of Solid State Science and Technology. 6, 12, p. Q166-Q170

Research output: Contribution to journalArticle

High electron mobility transistors
Electric breakdown
Hydrogen peroxide
Hydrogen Peroxide
Transconductance
2019
1 Citation (Scopus)

Improved ultraviolet detection and device performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W. C., 2019 Jan 1, In : IEEE Journal of the Electron Devices Society. 7, p. 430-434 5 p., 8671702.

Research output: Contribution to journalArticle

Semiconductors
High electron mobility transistors
Oxides
Metals
Electric breakdown
2017
3 Citations (Scopus)

Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

Liu, H. Y., Lin, C. W., Hsu, W. C., Lee, C. S., Chiang, M. H., Sun, W. C., Wei, S. Y. & Yu, S. M., 2017 Jan, In : IEEE Electron Device Letters. 38, 1, p. 91-94 4 p., 7736038.

Research output: Contribution to journalArticle

Threshold voltage
Fabrication
Spray pyrolysis
Gate dielectrics
Electric breakdown
2016
7 Citations (Scopus)
Spray pyrolysis
High electron mobility transistors
Electric breakdown
Current density
Ultrasonics
2018
1 Citation (Scopus)

Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W. C., 2018 Jan 1, In : IEEE Journal of the Electron Devices Society. 6, p. 1142-1146 5 p., 8470934.

Research output: Contribution to journalArticle

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
5 Citations (Scopus)
Semiconductors
High electron mobility transistors
Oxides
Metals
Substrates
5 Citations (Scopus)

Deposition of Oxide Thin Films by Ultrasonic Spray Pyrolysis Deposition for InGaZnO Thin-Film Transistor Applications

Liu, H. Y., Hung, C. C. & Hsu, W. C., 2018 Oct, In : IEEE Electron Device Letters. 39, 10, p. 1520-1523 4 p., 8444690.

Research output: Contribution to journalArticle

Spray pyrolysis
Thin film transistors
Oxide films
Ultrasonics
Thin films
2017
3 Citations (Scopus)

Amorphous TiO2-based thin-film phototransistor

Liu, H. Y., Huang, R. C., Li, Y. Y., Lee, C. S. & Hsu, W. C., 2017 Jun, In : IEEE Electron Device Letters. 38, 6, p. 756-759 4 p., 7898432.

Research output: Contribution to journalArticle

Phototransistors
Thin films
Gate dielectrics
Amorphous films
Field effect transistors
2016
7 Citations (Scopus)

Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

Lee, C. S., Hsu, W. C., Liu, H. Y., Wu, T. T., Sun, W. C., Wei, S. Y. & Yu, S. M., 2016 Mar 29, In : Semiconductor Science and Technology. 31, 5, 055012.

Research output: Contribution to journalArticle

Spray pyrolysis
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
pyrolysis