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  • 2020
  • 2019
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Author

  • Wei-Chou Hsu
Article

Al₂O₃-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al₂O₃/TiO₂ Passivation Oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W. C., 2018 Jan 1, (Accepted/In press) In : IEEE Journal of the Electron Devices Society.

Research output: Contribution to journalArticle

Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method

Lee, C. S., Hsu, W-C., Liu, H. Y., Tsai, J. H. & Huang, H. H., 2016 Apr 1, In : Japanese Journal of Applied Physics. 55, 4, 044102.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel

Lee, C. S., Shen, Y. T., Hsu, W. C., Huang, Y. P. & You, C. Y., 2020 Jan 1, In : IEEE Journal of the Electron Devices Society. 8, p. 9-14 6 p., 8917644.

Research output: Contribution to journalArticle

Open Access
5 Citations (Scopus)

Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W. C., 2018 Jan 1, In : IEEE Journal of the Electron Devices Society. 6, p. 1142-1146 5 p., 8470934.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Al2O3-passivated graded-barrier AlxGa1-xN/AlN/GaN/Si heterostructure field-effect transistor by hydrogen peroxide oxidization method

Lee, C. S., Hsu, W. C., Liu, H. Y. & Yang, S. T., 2017 Jan 1, In : ECS Journal of Solid State Science and Technology. 6, 12, p. Q166-Q170

Research output: Contribution to journalArticle

1 Citation (Scopus)

All-zigzag graphene nanoribbons for planar interconnect application

Chen, P. A., Chiang, M. H. & Hsu, W. C., 2017 Jul 21, In : Journal of Applied Physics. 122, 3, 034301.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis Deposition

Liu, H. Y., Hsu, W. C., Chen, J. H., Hsu, P. H. & Lee, C. S., 2020 Mar, In : IEEE Transactions on Electron Devices. 67, 3, p. 1009-1013 5 p., 8974445.

Research output: Contribution to journalArticle

Amorphous TiO2-based thin-film phototransistor

Liu, H. Y., Huang, R. C., Li, Y. Y., Lee, C. S. & Hsu, W. C., 2017 Jun, In : IEEE Electron Device Letters. 38, 6, p. 756-759 4 p., 7898432.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures

Lee, C. S., Hsu, W-C., Liu, H. Y., Chen, S. F., Chen, Y. C. & Yang, S. T., 2017 Aug 1, In : Materials Science in Semiconductor Processing. 66, p. 39-43 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique

Lee, C. S., Hsu, W. C., Chiang, B. J., Liu, H. Y. & Lee, H. Y., 2017 Apr 5, In : Semiconductor Science and Technology. 32, 5, 055012.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Comparative Study on Graded-Barrier AlxGa1-xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

Lee, C. S., Hsu, W. C., Huang, Y. P., Liu, H. Y., Yang, W. L. & Yang, S. T., 2018 Apr 26, In : Semiconductor Science and Technology. 33, 6, 065004.

Research output: Contribution to journalArticle

2 Citations (Scopus)
1 Citation (Scopus)

Deposition of Oxide Thin Films by Ultrasonic Spray Pyrolysis Deposition for InGaZnO Thin-Film Transistor Applications

Liu, H. Y., Hung, C. C. & Hsu, W. C., 2018 Oct, In : IEEE Electron Device Letters. 39, 10, p. 1520-1523 4 p., 8444690.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Huang, Y. P., Hsu, W. C., Liu, H. Y. & Lee, C. S., 2019 Jun, In : IEEE Electron Device Letters. 40, 6, p. 929-932 4 p., 8693634.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Improved ultraviolet detection and device performance of Al2O3-Dielectric In0.17Al0.83N/AlN/GaN MOS-HFETs

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W. C., 2019 Jan 1, In : IEEE Journal of the Electron Devices Society. 7, p. 430-434 5 p., 8671702.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

Liu, H. Y., Lin, C. W., Hsu, W. C., Lee, C. S., Chiang, M. H., Sun, W. C., Wei, S. Y. & Yu, S. M., 2017 Jan, In : IEEE Electron Device Letters. 38, 1, p. 91-94 4 p., 7736038.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane

Liu, H. Y., Hsu, W. C., Chen, W. F., Lin, C. W., Li, Y. Y., Lee, C. S., Sun, W. C., Wei, S. Y. & Yu, S. M., 2016 May 15, In : IEEE Sensors Journal. 16, 10, p. 3514-3522 9 p., 7409941.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Investigation of post oxidation annealing effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

Liu, H. Y., Ou, W. C. & Hsu, W. C., 2016 Sep, In : IEEE Journal of the Electron Devices Society. 4, 5, p. 358-364 7 p., 7523248.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

Lee, C. S., Hsu, W. C., Liu, H. Y., Wu, T. T., Sun, W. C., Wei, S. Y. & Yu, S. M., 2016 Mar 29, In : Semiconductor Science and Technology. 31, 5, 055012.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment

Lee, C. S., Liu, H. Y., Hsu, W. C. & Chen, S. F., 2017 Mar 1, In : Materials Science in Semiconductor Processing. 59, p. 1-4 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
7 Citations (Scopus)
Conference contribution

An RRAM with a 2D material embedded double switching layer for neuromorphic computing

Chen, P. A., Ge, R. J., Lee, J. W., Hsu, C. H., Hsu, W. C., Akinwande, D. & Chiang, M. H., 2019 Jan 8, 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 8605915. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT

Liu, H. Y., Lee, C. S., Lin, C. W., Chiang, M. H. & Hsu, W. C., 2017 Aug 1, 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 7999446. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Gradual RESET modulation by intentionally oxidized titanium oxide for multilayer-hBN RRAM

Chen, P. A., Hsu, W. C. & Chiang, M. H., 2019 Oct, 2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019. Institute of Electrical and Electronics Engineers Inc., 9084024. (2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Simulation based study of oxygen plasma induced defects on zigzag graphene nanoribbons

Chen, P. A., Lee, J. W., Chiang, M. H. & Hsu, W. C., 2017 Jan 1, ECS Transactions. Bhansali, S., Brankovic, S., Buttry, D. A., Chu, D., Imahori, H., Katayama, H., Leonte, O., Mukerjee, S., Mukundan, R., Oren, Y., Romankiw, L., Sharma, N., Simonian, A., Trulove, P. C., Vaughey, J. T., Winter, M., Bartlett, P. N., Di Noto, V., Doeff, M., Druffel, T., Fenton, J. M., Fergus, J., Fukunaka, Y., Itagaki, M., Koehne, J., Kostecki, R., Lynch, R. P., Milosev, I., Narayan, S. R., Subramanian, V., Tatsuma, T., Wu, N., Chen, Z., Haverhals, L. M., Hesketh, P., Hillier, A. C., Inaba, M., Krumdick, G., Leddy, J., Manivannan, M., Maurice, V., Mitra, S., Muldoon, J., Noel, J., Rajeshwar, K., Subramanian, V. R., Suroviec, A. H., Suto, K., Zangari, G., Allongue, P., Birbilis, N., Boltalina, O. V., Calabrese Barton, S., Chaitanya, V., Chidambaram, D., Hite, J. K., Lee, J. J., Mantz, R. A., Mauzeroll, J., Minteer, S. D., Orazem, M. E., Ramasamy, R. P., Riemer, D. P., Roeper, D., Rohwerder, M., Sailor, M. J., Schwartz, D. T., Staser, J. A., Wu, G., Xu, H., Alkire, R., Anderson, T. J., Bayachou, M., Bocarsly, A. B., Choi, J. W., Innocenti, M., Kilgore, S. H., Kim, D. J., Kulesza, P. J., Lu, Y. C., Marcus, P., Mauter, M., Nicholas, J. D., Pylypenko, S., Rhodes, C., Soleymani, L., Tao, M., Xing, Y., Abbott, A. P., Chin, B. A., Cliffel, D. E., Douglas, E. A., Edstrom, K., Hamada, H., McMurray, H. N., Meng, Y. S., Miller, E. L., Navaei, M., Nonnenmann, S. S., O'Dwyer, C., Pharkya, P., Rotkin, S. V., Rupp, J. L. M., Williams, G., Bock, C., Buchheit, R., Cheek, G. T., Deligianni, H., Johnson, C., Park, J. G., Pintauro, P. N., Smith, K. C., Vanysek, P., Wang, H., Whitacre, J. F., Xiao, J., Carter, M. T., Dimitrov, N., Fransaer, J., Guyomard, D., Lucht, B. L., Nagahara, L., Natishan, P. M., Sekhar, P. K., Smith, D. K., Stafford, G. R., Sundaram, K. B., Vasiljevic, N., Virtanen, S., Wang, W., Wood, D. L. & Yang, J. J. (eds.). 10 ed. Electrochemical Society Inc., p. 463-471 9 p. (ECS Transactions; vol. 80, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution