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• AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer

  Chang, S. J., Lee, K. H., Chang, P. C., Wang, Y. C., Kuo, C. H. & Wu, S. L., 2009 Feb, In: IEEE Sensors Journal. 9, 2, p. 87-92 6 p., 4749393.

  Research output: Contribution to journal › Article › peer-review
  13 Citations (Scopus)

• AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts

  Chang, P. C., Chen, C. H., Chang, S. J., Su, Y. K., Yu, C. L., Chen, P. C. & Wang, C. H., 2004 Dec, In: Semiconductor Science and Technology. 19, 12, p. 1354-1357 4 p.

  Research output: Contribution to journal › Article › peer-review
  27 Citations (Scopus)

• AlGaN/GaN MOSHFET with a SiO₂ gate by liquid phase deposition

  Huang, J. J., Sze, P. W., Lin, S. K., Lai, W. C., Wang, Y. H. & Houng, M. P., 2004, In: Physica Scripta T. T114, p. 94-96 3 p.

  Research output: Contribution to journal › Conference article › peer-review

• AlGaN/GaN MOS-HFETs based on InGaN/GaN MQW structures with Ta ₂O ₅ dielectric

  Lee, K. H., Chang, P. C., Chang, S. J. & Yin, Y. C., 2012 Mar, In: EPJ Applied Physics. 57, 3, 30102.

  Research output: Contribution to journal › Article › peer-review

• AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment

  Chiou, Y. L. & Lee, C. T., 2010, TENCON 2010 - 2010 IEEE Region 10 Conference. p. 1222-1224 3 p. 5686365

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

• AlGaN/GaN MOS-HEMTs with TiO₂ gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

  Liu, H. Y., Lee, C. S., Hsu, W. C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C. & Chang, H. C., 2015 Aug 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 578-580 3 p. 7203398. (Proceedings of the International Conference on Power Electronics and Drive Systems; vol. 2015-August).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
  3 Citations (Scopus)

• AlGaN/GaN MOSHEMTs with liquid-phase-deposited TiO ₂ as gate dielectric

  Wu, T. Y., Lin, S. K., Sze, P. W., Huang, J. J., Chien, W. C., Hu, C. C., Tsai, M. J. & Wang, Y. H., 2009 Dec, In: IEEE Transactions on Electron Devices. 56, 12, p. 2911-2916 6 p., 5291787.

  Research output: Contribution to journal › Article › peer-review
  27 Citations (Scopus)

• AlGaN/GaN MOS-HEMTs with gate ZnO dielectric layer

  Lee, C. T., Chiou, Y. L. & Lee, C. S., 2010 Nov, In: IEEE Electron Device Letters. 31, 11, p. 1220-1223 4 p., 5585700.

  Research output: Contribution to journal › Article › peer-review
  43 Citations (Scopus)

• AlGaN/GaN modulation-doped field-effect transistors with An Mg-doped carrier confinement layer

  Chang, S. J., Wei, S. C., Su, Y. K., Liu, C. H., Chen, S. C., Liaw, U. H., Tsai, T. Y. & Hsu, T. H., 2003 Jun, In: Japanese Journal of Applied Physics. 42, 6 A, p. 3316-3319 4 p.

  Research output: Contribution to journal › Article › peer-review
  20 Citations (Scopus)

• AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor with liquid-phase-deposited barium-doped TiO ₂ as a gate dielectric

  Hu, C. C., Lin, M. S., Wu, T. Y., Adriyanto, F., Sze, P. W., Wu, C. L. & Wang, Y. H., 2012 Jan, In: IEEE Transactions on Electron Devices. 59, 1, p. 121-127 7 p., 6069856.

  Research output: Contribution to journal › Article › peer-review
  19 Citations (Scopus)

• AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al₂ O₃ as gate dielectric

  Basu, S., Singh, P. K., Sze, P. W. & Wang, Y-H., 2010 Sep 7, In: Journal of the Electrochemical Society. 157, 10

  Research output: Contribution to journal › Article › peer-review
  16 Citations (Scopus)

• AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate

  Wu, T. Y., Hu, C. C., Sze, P. W., Huang, T. J., Adriyanto, F., Wu, C. L. & Wang, Y. H., 2013, In: Solid-State Electronics. 82, p. 1-5 5 p.

  Research output: Contribution to journal › Article › peer-review
  5 Citations (Scopus)

• AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH₄)₂S_x surface treatment

  Chiou, Y. L., Lee, C. S. & Lee, C. T., 2010 Jul 19, In: Applied Physics Letters. 97, 3, 032107.

  Research output: Contribution to journal › Article › peer-review
  26 Citations (Scopus)

• AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method

  Huang, L. H., Yeh, S. H., Lee, C. T., Tang, H., Bardwell, J. & Webb, J. B., 2008 Apr, In: IEEE Electron Device Letters. 29, 4, p. 284-286 3 p.

  Research output: Contribution to journal › Article › peer-review
  58 Citations (Scopus)

• AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga₂O₃ Gate Dielectric Layer Grown by Vapor Cooling Condensation System

  Lee, H. Y., Chang, T. W. & Lee, C. T., 2021 Jun, In: Journal of Electronic Materials. 50, 6, p. 3748-3753 6 p.

  Research output: Contribution to journal › Article › peer-review
  4 Citations (Scopus)

• AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

  Huang, L. H., Ciou, Y. L., Yen, S. H. & Lee, C. T., 2007 Dec 1, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. p. 275-278 4 p. 4450115. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

• Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio₂ gate oxide

  Wang, C. K., Chiou, Y. Z., Chang, S. J., Su, Y. K., Huang, B. R., Lin, T. K. & Chen, S. C., 2003 May, In: Journal of Electronic Materials. 32, 5, p. 407-410 4 p.

  Research output: Contribution to journal › Article › peer-review
  17 Citations (Scopus)

• AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide

  Chou, D. W., Lee, K. W., Huang, J. J., Wu, H. R., Wang, Y. H., Houng, M. P., Chang, S. J. & Su, Y. K., 2002 Jul 1, In: Japanese Journal of Applied Physics, Part 2: Letters. 41, 7 A, p. L748-L750

  Research output: Contribution to journal › Article › peer-review
  28 Citations (Scopus)

• AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

  Lee, K. H., Chang, P. C. & Chang, S. J., 2011 Oct 10, In: Applied Physics Letters. 99, 15, 153505.

  Research output: Contribution to journal › Article › peer-review
  3 Citations (Scopus)

• AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

  Chang, P. C., Lee, K. H., Wang, Z. H. & Chang, S. J., 2014, In: Journal of Nanomaterials. 2014, 623043.

  Research output: Contribution to journal › Article › peer-review
  2 Citations (Scopus)

• AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO ₂ dielectrics

  Lee, K. H., Chang, P. C. & Chang, S. J., 2013, In: Microelectronic Engineering. 104, p. 105-109 5 p.

  Research output: Contribution to journal › Article › peer-review
  9 Citations (Scopus)

• AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

  Lee, K. H., Chang, P. C., Chang, S. J., Su, Y. K. & Yu, C. L., 2010 May 24, In: Applied Physics Letters. 96, 21, 212105.

  Research output: Contribution to journal › Article › peer-review
  15 Citations (Scopus)

• AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications

  Chung, Y., Hang, C. Y., Cai, S., Qian, Y., Wen, C. P., Wang, K. L. & Itoh, T., 2003 Feb, In: IEEE Transactions on Microwave Theory and Techniques. 51, 2 II, p. 653-659 7 p.

  Research output: Contribution to journal › Article › peer-review
  49 Citations (Scopus)

• AlGaN/GaN heterostructure grown on 1∘-tilt sapphire substrate by MOCVD

  Lam, K. T., Yu, C. L., Chang, P. C., Liaw, U. H., Chang, S. J. & Lin, J. C., 2008 Mar, In: Superlattices and Microstructures. 43, 3, p. 147-152 6 p.

  Research output: Contribution to journal › Article › peer-review
  4 Citations (Scopus)

• AlGaN/GaN heterostructure field-effect transistor with semi-insulating Mg-doped GaN cap layer

  Lee, K. H., Chang, P. C. & Chang, S. J., 2012, In: ECS Solid State Letters. 1, 1, p. Q14-Q16

  Research output: Contribution to journal › Article › peer-review
  2 Citations (Scopus)

• AlGaN/GaN heterostructure field-effect transistors with multi-Mg _xN _y/GaN buffer and Photo-CVD SiO ₂ gate dielectric

  Lee, K. H., Chang, P. C., Chang, S. J. & Su, Y. K., 2012 Jun, In: Solid-State Electronics. 72, p. 38-43 6 p.

  Research output: Contribution to journal › Article › peer-review
  2 Citations (Scopus)

• AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO₃/HfO₂/Al₂O₃Structure

  Lee, H. Y., Lin, C. H., Wei, C. C., Yang, J. C., Chang, E. Y. & Lee, C. T., 2021 Aug, In: IEEE Transactions on Electron Devices. 68, 8, p. 3768-3774 7 p., 9466375.

  Research output: Contribution to journal › Article › peer-review
  3 Citations (Scopus)

• AlGaN/AlN/GaN MOS-HEMTs with Al₂O₃ gate dielectric formed by using ozone water oxidation technique

  Lee, C. S., Liu, H. Y., Hsu, W. C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C. & Chang, H. C., 2015 Aug 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 194-196 3 p. 7203397. (Proceedings of the International Conference on Power Electronics and Drive Systems; vol. 2015-August).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

• Algal extracellular organic matter mediated photocatalytic degradation of estrogens

  Wu, P. H., Yeh, H. Y., Chou, P. H., Hsiao, W. W. & Yu, C. P., 2021 Feb, In: Ecotoxicology and Environmental Safety. 209, 111818.

  Research output: Contribution to journal › Article › peer-review

  Open Access
  5 Citations (Scopus)

• Algal biomass dehydration

  Show, K. Y., Lee, D. J. & Chang, J. S., 2013 May, In: Bioresource technology. 135, p. 720-729 10 p.

  Research output: Contribution to journal › Article › peer-review
  87 Citations (Scopus)

• AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

  Chang, S. J., Chang, C. S., Su, Y. K., Chang, P. T., Wu, Y. R., Huang, K. H. & Chen, T. P., 1997 Sep, In: IEEE Photonics Technology Letters. 9, 9, p. 1199-1201 3 p.

  Research output: Contribution to journal › Article › peer-review
  18 Citations (Scopus)

• AlGaInp - Sapphire glue bonded light-emitting diodes

  Chang, S. J., Su, Y. K., Yang, T., Chang, C. S., Chen, T. P. & Huang, K. H., 2002 Oct, In: IEEE Journal of Quantum Electronics. 38, 10, p. 1390-1394 5 p.

  Research output: Contribution to journal › Article › peer-review
  13 Citations (Scopus)

• AlGaInP multiquantum well light-emitting diodes

  Chang, S. J., Chang, C. S., Su, Y. K., Chang, P. T., Wu, Y. R., Huang, K. H. & Chen, T. P., 1997, In: IEE Proceedings: Optoelectronics. 144, 6, p. 405-409 5 p.

  Research output: Contribution to journal › Article › peer-review
  7 Citations (Scopus)

• AlGaInP LEDs prepared by contact-transferred and mask-embedded lithography

  Lo, H. M., Hsieh, Y. T., Shei, S. C., Lee, Y. C., Zeng, X. F., Weng, W. Y., Lin, N. M. & Chang, S. J., 2010, In: IEEE Journal of Quantum Electronics. 46, 12, p. 1834-1839 6 p., 5638356.

  Research output: Contribution to journal › Article › peer-review
  10 Citations (Scopus)

• AlGaInP-GaInP compressively strained multiquantum-well light-emitting diodes for polymer fiber application

  Chang, S. J. & Chang, C. S., 1998 Jun, In: IEEE Photonics Technology Letters. 10, 6, p. 772-774 3 p.

  Research output: Contribution to journal › Article › peer-review
  15 Citations (Scopus)

• AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods

  Lin, N. M., Shei, S. C. & Chang, S-J., 2015 Jun 23, 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015. Institute of Electrical and Electronics Engineers Inc., 7131953. (4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

• AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

  Chang, S. J., Zeng, X. F., Shei, S. C. & Li, S., 2013, In: IEEE Journal of Quantum Electronics. 49, 10, p. 846-851 6 p., 6587778.

  Research output: Contribution to journal › Article › peer-review
  9 Citations (Scopus)

• AlGaInP-based LEDs with a p⁺-GaP window layer and a thermally annealed ITO contact

  Lo, H. M., Shei, S. C., Zeng, X. F., Chang, S. J. & Lin, H. Y., 2011, In: IEEE Journal of Quantum Electronics. 47, 6, p. 803-809 7 p., 5764940.

  Research output: Contribution to journal › Article › peer-review
  12 Citations (Scopus)

• AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

  Chang, S. J., Sheu, J. K., Su, Y. K., Jou, M. J. & Chi, G. C., 1996 Aug, In: Japanese Journal of Applied Physics. 35, 8, p. 4199-4202 4 p.

  Research output: Contribution to journal › Article › peer-review
  12 Citations (Scopus)

• AlGaInP/GaP heterostructures bonded with si substrate to serve as solar cells and light emitting diodes

  Yan, L. J., Yang, C. C., Lee, M. L., Tu, S. J., Chang, C. S. & Sheu, J. K., 2010, In: Journal of the Electrochemical Society. 157, 4, p. H452-H454

  Research output: Contribution to journal › Article › peer-review
  6 Citations (Scopus)

• AlgaePath: Comprehensive analysis of metabolic pathways using transcript abundance data from next-generation sequencing in green algae

  Zheng, H. Q., Chiang-Hsieh, Y. F., Chien, C. H., Hsu, B. K. J., Liu, T. L., Chen, C. N. N. & Chang, W. C., 2014 Mar 14, In: BMC genomics. 15, 1, 196.

  Research output: Contribution to journal › Article › peer-review
  26 Citations (Scopus)

• Algae-derived hydrocolloids in foods: applications and health-related issues

  Liao, Y. C., Chang, C. C., Nagarajan, D., Chen, C. Y. & Chang, J. S., 2021, In: Bioengineered. 12, 1, p. 3787-3801 15 p.

  Research output: Contribution to journal › Review article › peer-review

  Open Access
  2 Citations (Scopus)

• Algae cultivation in wastewater for biodiesel - A review

  Tan, C. H., Cheah, W. Y., Ling, T. C., Show, P. L., Juan, J. C. & Chang, J. S., 2015 Oct, Chemical Engineering Transactions. Liu, X., Varbanov, P. S., Klemes, J. J., Wan Alwi, S. R. & Yong, J. Y. (eds.). Italian Association of Chemical Engineering - AIDIC, Vol. 45. p. 1393-1398 6 p.

  Research output: Chapter in Book/Report/Conference proceeding › Chapter
  7 Citations (Scopus)

• Al-Ga coating mechanism and discharge-charge characteristics of Li-Mn-O cathode powders at -30-55 °c

  Hung, F. Y. & Yang, K. Y., 2014 Dec 15, In: Journal of Power Sources. 268, p. 7-13 7 p.

  Research output: Contribution to journal › Article › peer-review
  6 Citations (Scopus)

• AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm

  Sulima, O. V., Refaat, T. F., Mauk, M. G., Cox, J. A., Li, J., Lohokare, S. K., Abedin, M. N., Singh, U. N. & Rand, J. A., 2004 Jun 10, In: Electronics Letters. 40, 12, p. 766-767 2 p.

  Research output: Contribution to journal › Article › peer-review
  14 Citations (Scopus)

• AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with low temperature liquid phase deposited Al ₂O₃ gate insulator

  Basu, S., Singh, P. K., Sze, P. W. & Wang, Y. H., 2008, In: Journal of Applied Physics. 104, 5, 054116.

  Research output: Contribution to journal › Article › peer-review
  5 Citations (Scopus)

• AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric

  Lee, K. W., Sze, P. W., Wang, Y. H. & Houng, M. P., 2005 Feb, In: Solid-State Electronics. 49, 2, p. 213-217 5 p.

  Research output: Contribution to journal › Article › peer-review
  14 Citations (Scopus)

• AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition

  Hung, C. W., Lin, H. L., Tsai, Y. Y., Lai, P. H., Fu, S. I., Chen, H. I. & Liu, W. C., 2006 Feb 8, In: Japanese Journal of Applied Physics. 45, 2 A, p. 680-684 5 p.

  Research output: Contribution to journal › Article › peer-review
  14 Citations (Scopus)

• AlGaAs/InGaAs/GaAs heterostructureemitter and heterostructure-base transistor (HEHBT)

  Tsai, J. H., Cheng, S. Y., Laih, L. W. & Liu, W. C., 1996 Jan 1, In: Electronics Letters. 32, 18, p. 1720-1722 3 p.

  Research output: Contribution to journal › Article › peer-review
  4 Citations (Scopus)

• AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy

  Liu, W. C. & Lour, W. S., 1991 Jul, In: Solid State Electronics. 34, 7, p. 717-722 6 p.

  Research output: Contribution to journal › Article › peer-review
  17 Citations (Scopus)