A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh

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68 Citations (Scopus)

Abstract

The authors report the growth of β-Ga2 O3 thin film by simple furnace oxidation of GaN thin film and the fabrication of a solar-blind β-Ga2 O3 photodetector (PD). For the PD with an active area of 4.4 mm2 and 5-V applied bias, it was found that measured current was only 1.39 × 10-10 A in the dark and increased to 2.03 × 10-5 A when illuminated with 260-nm ultraviolet (UV) light (41.27 μW/cm2). It was also found that the fabricated PD exhibits an extremely large deep-UV-to-visible rejection ratio.

Original languageEnglish
Article number5582132
Pages (from-to)999-1003
Number of pages5
JournalIEEE Sensors Journal
Volume11
Issue number4
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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