A β-Ga2O3/GaN hetero-structured solar-blind and visible-blind dual-band photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh

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13 Citations (Scopus)

Abstract

The authors report the fabrication of a β-Ga2O 3/GaN solar-blind and visible-blind dual-band photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-UV to near-UV contrast ratio of 4.6 × 103 when the device was biased at 1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 8.5 × 10 2 when biased at 10 V.

Original languageEnglish
Article number5640631
Pages (from-to)1491-1492
Number of pages2
JournalIEEE Sensors Journal
Volume11
Issue number6
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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