A β-Ga2O3/GaN Schottky-barrier photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh

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19 Citations (Scopus)


The authors report the formation of β-Ga2O3/GaN heterostructure and the fabrication of a β-Ga2O3/GaN bilayer photodetector (PD). It was found that we could control the depletion depth of the device and thus switch the operation mode between solar-blind and visible-blind by simply changing the applied bias. It was also found that we could achieve a deep-ultraviolet (UV) to near-UV contrast ratio of 200 when the device was biased at -1 V. Furthermore, it was found that near-UV to visible contrast ratio of the fabricated β-Ga2O3/GaN PD was 260 when biased at - 10 V.

Original languageEnglish
Article number5701657
Pages (from-to)444-446
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number7
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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