A δ-doped GaAs/graded InxGa1-xAs/GaAs pseudomorphic structure grown by low-pressure metal organic chemical vapor deposition

W. C. Hsu; C. M. Chen; R. T. Hsu

doi:10.1063/1.106349

A δ-doped GaAs/graded In_xGa_1-xAs/GaAs pseudomorphic structure grown by low-pressure metal organic chemical vapor deposition

W. C. Hsu, C. M. Chen, R. T. Hsu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A δ-doped GaAs/graded In_xGa_1-xAs/GaAs pseudomorphic structure grown by low-pressure metal-organic chemical vapor deposition was demonstrated for the first time. The graded In_xGa _1-x As layer in which the composition x ranged from 0.25 to 0.20 was strained to obtain a pseudomorphic structure. Furthermore, a δ-doped high-electron mobility transistor (δ-HEMT) employing a graded In _xGa_1-x As layer was successfully fabricated. Due to better electron confinement and lower interface roughness scattering, the present structure reveals higher saturation current density, higher transconductance, and higher product of mobility and two-dimensional sheet density as compared to those of conventional HEMTs which were also fabricated by the same system and procedure.

Original language	English
Pages (from-to)	1075-1077
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	9
DOIs	https://doi.org/10.1063/1.106349
Publication status	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.106349

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title = "A δ-doped GaAs/graded InxGa1-xAs/GaAs pseudomorphic structure grown by low-pressure metal organic chemical vapor deposition",

abstract = "A δ-doped GaAs/graded InxGa1-xAs/GaAs pseudomorphic structure grown by low-pressure metal-organic chemical vapor deposition was demonstrated for the first time. The graded InxGa 1-x As layer in which the composition x ranged from 0.25 to 0.20 was strained to obtain a pseudomorphic structure. Furthermore, a δ-doped high-electron mobility transistor (δ-HEMT) employing a graded In xGa1-x As layer was successfully fabricated. Due to better electron confinement and lower interface roughness scattering, the present structure reveals higher saturation current density, higher transconductance, and higher product of mobility and two-dimensional sheet density as compared to those of conventional HEMTs which were also fabricated by the same system and procedure.",

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AU - Hsu, W. C.

AU - Chen, C. M.

AU - Hsu, R. T.

PY - 1991

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N2 - A δ-doped GaAs/graded InxGa1-xAs/GaAs pseudomorphic structure grown by low-pressure metal-organic chemical vapor deposition was demonstrated for the first time. The graded InxGa 1-x As layer in which the composition x ranged from 0.25 to 0.20 was strained to obtain a pseudomorphic structure. Furthermore, a δ-doped high-electron mobility transistor (δ-HEMT) employing a graded In xGa1-x As layer was successfully fabricated. Due to better electron confinement and lower interface roughness scattering, the present structure reveals higher saturation current density, higher transconductance, and higher product of mobility and two-dimensional sheet density as compared to those of conventional HEMTs which were also fabricated by the same system and procedure.

AB - A δ-doped GaAs/graded InxGa1-xAs/GaAs pseudomorphic structure grown by low-pressure metal-organic chemical vapor deposition was demonstrated for the first time. The graded InxGa 1-x As layer in which the composition x ranged from 0.25 to 0.20 was strained to obtain a pseudomorphic structure. Furthermore, a δ-doped high-electron mobility transistor (δ-HEMT) employing a graded In xGa1-x As layer was successfully fabricated. Due to better electron confinement and lower interface roughness scattering, the present structure reveals higher saturation current density, higher transconductance, and higher product of mobility and two-dimensional sheet density as compared to those of conventional HEMTs which were also fabricated by the same system and procedure.

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A δ-doped GaAs/graded In_xGa_1-xAs/GaAs pseudomorphic structure grown by low-pressure metal organic chemical vapor deposition

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