A δ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer

Ching Sung Lee, Wei Chou Hsu, Sheng San Li, Pin Ho

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new δ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron mobility and 20% higher product value of electron mobility and two-dimensional electron gas (2DEG) concentration than those of the conventional HEMT with single undoped spacer under the same growth specifications. Superior device characteristics were achieved by employing the thickness-graded superlattice spacer to accommodate the lattice-mismatch-induced strain and to improve the interfacial quality. For a gate length of 1 μm, the maximum drain-to-source saturation current density and extrinsic transconductance of the present HEMT design are 165 mA mm-1 and 107 mS mm-1, respectively, at room temperature.

Original languageEnglish
Pages (from-to)329-334
Number of pages6
JournalSuperlattices and Microstructures
Volume29
Issue number5
DOIs
Publication statusPublished - 2001 May

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A δ-doped In<sub>0.24</sub>Ga<sub>0.76</sub>As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer'. Together they form a unique fingerprint.

  • Cite this