A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver

C. P. Chang, C. C. Yen, H. R. Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A 2.4-6 GHz broadband CMOS differential LNA for WLAN and UWB receiver is presented. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the chip is performed on a FR-4 PCB test fixture. In the UWB low-band (3 to 5.15GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P 1dB of -17 dBm, respectively. In the band from 2.4 to 3GHz (covering a 802.11b/g band), the LNA exhibit a gain of 17.5-18dB and noise figure less than 3.5dB. From 5.2 to 6GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8V.

Original languageEnglish
Title of host publicationGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages645-648
Number of pages4
Publication statusPublished - 2005 Dec 1
EventGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
Duration: 2005 Oct 32005 Oct 4

Publication series

NameGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Volume2005

Other

OtherGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
CountryFrance
CityParis
Period05-10-0305-10-04

Fingerprint

Noise figure
Wireless local area networks (WLAN)
Ultra-wideband (UWB)
Polychlorinated biphenyls

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chang, C. P., Yen, C. C., & Chuang, H. R. (2005). A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium (pp. 645-648). (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium; Vol. 2005).
Chang, C. P. ; Yen, C. C. ; Chuang, H. R. / A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver. GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. pp. 645-648 (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium).
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Chang, CP, Yen, CC & Chuang, HR 2005, A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver. in GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, vol. 2005, pp. 645-648, GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Paris, France, 05-10-03.

A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver. / Chang, C. P.; Yen, C. C.; Chuang, H. R.

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. p. 645-648 (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A 2.4-6 GHz broadband CMOS differential LNA for WLAN and UWB receiver is presented. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the chip is performed on a FR-4 PCB test fixture. In the UWB low-band (3 to 5.15GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P 1dB of -17 dBm, respectively. In the band from 2.4 to 3GHz (covering a 802.11b/g band), the LNA exhibit a gain of 17.5-18dB and noise figure less than 3.5dB. From 5.2 to 6GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8V.

AB - A 2.4-6 GHz broadband CMOS differential LNA for WLAN and UWB receiver is presented. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the chip is performed on a FR-4 PCB test fixture. In the UWB low-band (3 to 5.15GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P 1dB of -17 dBm, respectively. In the band from 2.4 to 3GHz (covering a 802.11b/g band), the LNA exhibit a gain of 17.5-18dB and noise figure less than 3.5dB. From 5.2 to 6GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8V.

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Chang CP, Yen CC, Chuang HR. A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. 2005. p. 645-648. (GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium).