TY - GEN
T1 - A 0.18-μm 2.4-6GHz CMOS broadband differential LNA for WLAN and UWB receiver
AU - Chang, C. P.
AU - Yen, C. C.
AU - Chuang, H. R.
PY - 2005
Y1 - 2005
N2 - A 2.4-6 GHz broadband CMOS differential LNA for WLAN and UWB receiver is presented. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the chip is performed on a FR-4 PCB test fixture. In the UWB low-band (3 to 5.15GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P 1dB of -17 dBm, respectively. In the band from 2.4 to 3GHz (covering a 802.11b/g band), the LNA exhibit a gain of 17.5-18dB and noise figure less than 3.5dB. From 5.2 to 6GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8V.
AB - A 2.4-6 GHz broadband CMOS differential LNA for WLAN and UWB receiver is presented. The LNA is fabricated with the 0.18 μm 1P6M standard CMOS process. Measurement of the chip is performed on a FR-4 PCB test fixture. In the UWB low-band (3 to 5.15GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P 1dB of -17 dBm, respectively. In the band from 2.4 to 3GHz (covering a 802.11b/g band), the LNA exhibit a gain of 17.5-18dB and noise figure less than 3.5dB. From 5.2 to 6GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8V.
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M3 - Conference contribution
AN - SCOPUS:33847243321
SN - 8890201207
SN - 9788890201202
T3 - GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
SP - 645
EP - 648
BT - GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
T2 - GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Y2 - 3 October 2005 through 4 October 2005
ER -