A 0.25-μm 20-dBm 2.4-GHz CMOS power amplifier with an integrated diode linearizer

Cheng Chi Yen, Huey-Ru Chuang

Research output: Contribution to journalLetter

71 Citations (Scopus)

Abstract

A 2.4-GHz CMOS power amplifier (PA) with an output power 20 dBm using 0.25-μm 1P5M standard CMOS process is presented. The PA uses an integrated diode connected NMOS transistor as the function of diode linearizer. It is believed that this is firstly reported to use the diode linearization technique in CMOS PA design. It shows effectively improvement in linearity from gain compression and ACPR measured results. Measurements are performed by using a FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28%. The obtained PA performances demonstrate the standard CMOS process potentialities for medium power RF amplification at 2.4 GHz wireless communication band.

Original languageEnglish
Pages (from-to)45-47
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume13
Issue number2
DOIs
Publication statusPublished - 2003 Feb 1

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power amplifiers
Power amplifiers
CMOS
Diodes
diodes
amplifier design
fixtures
polychlorinated biphenyls
output
wireless communication
power efficiency
linearization
Polychlorinated biphenyls
Linearization
linearity
Amplification
Transistors
transistors
Communication

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "A 0.25-μm 20-dBm 2.4-GHz CMOS power amplifier with an integrated diode linearizer",
abstract = "A 2.4-GHz CMOS power amplifier (PA) with an output power 20 dBm using 0.25-μm 1P5M standard CMOS process is presented. The PA uses an integrated diode connected NMOS transistor as the function of diode linearizer. It is believed that this is firstly reported to use the diode linearization technique in CMOS PA design. It shows effectively improvement in linearity from gain compression and ACPR measured results. Measurements are performed by using a FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28{\%}. The obtained PA performances demonstrate the standard CMOS process potentialities for medium power RF amplification at 2.4 GHz wireless communication band.",
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A 0.25-μm 20-dBm 2.4-GHz CMOS power amplifier with an integrated diode linearizer. / Yen, Cheng Chi; Chuang, Huey-Ru.

In: IEEE Microwave and Wireless Components Letters, Vol. 13, No. 2, 01.02.2003, p. 45-47.

Research output: Contribution to journalLetter

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AU - Yen, Cheng Chi

AU - Chuang, Huey-Ru

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N2 - A 2.4-GHz CMOS power amplifier (PA) with an output power 20 dBm using 0.25-μm 1P5M standard CMOS process is presented. The PA uses an integrated diode connected NMOS transistor as the function of diode linearizer. It is believed that this is firstly reported to use the diode linearization technique in CMOS PA design. It shows effectively improvement in linearity from gain compression and ACPR measured results. Measurements are performed by using a FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28%. The obtained PA performances demonstrate the standard CMOS process potentialities for medium power RF amplification at 2.4 GHz wireless communication band.

AB - A 2.4-GHz CMOS power amplifier (PA) with an output power 20 dBm using 0.25-μm 1P5M standard CMOS process is presented. The PA uses an integrated diode connected NMOS transistor as the function of diode linearizer. It is believed that this is firstly reported to use the diode linearization technique in CMOS PA design. It shows effectively improvement in linearity from gain compression and ACPR measured results. Measurements are performed by using a FR-4 PCB test fixture. The fabricated power amplifier exhibits an output power of 20 dBm and a power-added efficiency as high as 28%. The obtained PA performances demonstrate the standard CMOS process potentialities for medium power RF amplification at 2.4 GHz wireless communication band.

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