A 1-V, 44.6 ppm/C bandgap reference with CDS technique

Peng Yu Chen; Soon Jyh Chang; Chung Ming Huang; Chin Fu Lin

doi:10.1109/VLSI-DAT.2012.6212660

A 1-V, 44.6 ppm/C bandgap reference with CDS technique

Peng Yu Chen, Soon Jyh Chang, Chung Ming Huang, Chin Fu Lin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed and implemented in 0.18-m CMOS process. The core circuit occupies about 0.065 mm ² (240 m 271 m). Measurement results show that the temperature coefficient of the output is 47.3 ppm/C in the temperature range from 40 C to 100 C. The average power consumption is about 48.1 W.

Original language	English
Title of host publication	2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VLSI-DAT.2012.6212660
Publication status	Published - 2012
Event	2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Hsinchu, Taiwan Duration: 2012 Apr 23 → 2012 Apr 25

Publication series

Name	2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

Other

Other	2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012
Country/Territory	Taiwan
City	Hsinchu
Period	12-04-23 → 12-04-25

All Science Journal Classification (ASJC) codes

Hardware and Architecture

Access to Document

10.1109/VLSI-DAT.2012.6212660

Cite this

Chen, P. Y., Chang, S. J., Huang, C. M., & Lin, C. F. (2012). A 1-V, 44.6 ppm/C bandgap reference with CDS technique. In 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers Article 6212660 (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers). https://doi.org/10.1109/VLSI-DAT.2012.6212660

@inproceedings{67a8b43e1279487fb665d257449d3f5f,

title = "A 1-V, 44.6 ppm/C bandgap reference with CDS technique",

abstract = "A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed and implemented in 0.18-m CMOS process. The core circuit occupies about 0.065 mm 2 (240 m 271 m). Measurement results show that the temperature coefficient of the output is 47.3 ppm/C in the temperature range from 40 C to 100 C. The average power consumption is about 48.1 W.",

author = "Chen, {Peng Yu} and Chang, {Soon Jyh} and Huang, {Chung Ming} and Lin, {Chin Fu}",

year = "2012",

doi = "10.1109/VLSI-DAT.2012.6212660",

language = "English",

isbn = "9781457720819",

series = "2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers",

booktitle = "2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers",

note = "2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 ; Conference date: 23-04-2012 Through 25-04-2012",

}

Chen, PY, Chang, SJ , Huang, CM & Lin, CF 2012, A 1-V, 44.6 ppm/C bandgap reference with CDS technique. in 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers., 6212660, 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers, 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012, Hsinchu, Taiwan, 12-04-23. https://doi.org/10.1109/VLSI-DAT.2012.6212660

A 1-V, 44.6 ppm/C bandgap reference with CDS technique. / Chen, Peng Yu; Chang, Soon Jyh ; Huang, Chung Ming et al.
2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers. 2012. 6212660 (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A 1-V, 44.6 ppm/C bandgap reference with CDS technique

AU - Chen, Peng Yu

AU - Chang, Soon Jyh

AU - Huang, Chung Ming

AU - Lin, Chin Fu

PY - 2012

Y1 - 2012

N2 - A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed and implemented in 0.18-m CMOS process. The core circuit occupies about 0.065 mm 2 (240 m 271 m). Measurement results show that the temperature coefficient of the output is 47.3 ppm/C in the temperature range from 40 C to 100 C. The average power consumption is about 48.1 W.

AB - A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed and implemented in 0.18-m CMOS process. The core circuit occupies about 0.065 mm 2 (240 m 271 m). Measurement results show that the temperature coefficient of the output is 47.3 ppm/C in the temperature range from 40 C to 100 C. The average power consumption is about 48.1 W.

UR - http://www.scopus.com/inward/record.url?scp=84864059904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864059904&partnerID=8YFLogxK

U2 - 10.1109/VLSI-DAT.2012.6212660

DO - 10.1109/VLSI-DAT.2012.6212660

M3 - Conference contribution

AN - SCOPUS:84864059904

SN - 9781457720819

T3 - 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

BT - 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

T2 - 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012

Y2 - 23 April 2012 through 25 April 2012

ER -

Chen PY, Chang SJ , Huang CM, Lin CF. A 1-V, 44.6 ppm/C bandgap reference with CDS technique. In 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers. 2012. 6212660. (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers). doi: 10.1109/VLSI-DAT.2012.6212660

A 1-V, 44.6 ppm/C bandgap reference with CDS technique

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this