A 1-V, 44.6 ppm/C bandgap reference with CDS technique

Peng Yu Chen, Soon-Jyh Chang, Chung-Ming Huang, Chin Fu Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed and implemented in 0.18-m CMOS process. The core circuit occupies about 0.065 mm 2 (240 m 271 m). Measurement results show that the temperature coefficient of the output is 47.3 ppm/C in the temperature range from 40 C to 100 C. The average power consumption is about 48.1 W.

Original languageEnglish
Title of host publication2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers
DOIs
Publication statusPublished - 2012 Jul 25
Event2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Hsinchu, Taiwan
Duration: 2012 Apr 232012 Apr 25

Publication series

Name2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers

Other

Other2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012
CountryTaiwan
CityHsinchu
Period12-04-2312-04-25

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

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  • Cite this

    Chen, P. Y., Chang, S-J., Huang, C-M., & Lin, C. F. (2012). A 1-V, 44.6 ppm/C bandgap reference with CDS technique. In 2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers [6212660] (2012 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2012 - Proceedings of Technical Papers). https://doi.org/10.1109/VLSI-DAT.2012.6212660