A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing

Shaun Chou; Gu Huan Li; Shawn Chen; Jun Hao Chang; Wan Hsueh Cheng; Shao Ding Wu; Philex Fan; Chia En Huang; Yu Der Chih; Yih Wang; Jonathan Chang

doi:10.23919/VLSICircuits52068.2021.9492438

A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing

Shaun Chou, Gu Huan Li, Shawn Chen, Jun Hao Chang, Wan Hsueh Cheng, Shao Ding Wu, Philex Fan, Chia En Huang, Yu Der Chih, Yih Wang, Jonathan Chang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A 16Kb one-time-programmable (OTP) antifuse memory is fabricated in a 5nm high-K, metal-gate FinFET CMOS for the first time. The bootstrap high voltage scheme (BHVS), read endpoint detection (REPD) and pseudo-differential sensing (PDS) are implemented to achieve intrinsic bit error rate (BER) below 1ppb for in-field programming in 5nm SoC and 10 years of data retention at 125°C.

Original language	English
Title of host publication	2021 Symposium on VLSI Circuits, VLSI Circuits 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863487796
DOIs	https://doi.org/10.23919/VLSICircuits52068.2021.9492438
Publication status	Published - 2021 Jun 13
Event	35th Symposium on VLSI Circuits, VLSI Circuits 2021 - Virutal, Online Duration: 2021 Jun 13 → 2021 Jun 19

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume	2021-June

Conference

Conference	35th Symposium on VLSI Circuits, VLSI Circuits 2021
City	Virutal, Online
Period	21-06-13 → 21-06-19

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.23919/VLSICircuits52068.2021.9492438

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Chou, S., Li, G. H., Chen, S., Chang, J. H., Cheng, W. H., Wu, S. D., Fan, P., Huang, C. E., Chih, Y. D., Wang, Y., & Chang, J. (2021). A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. In 2021 Symposium on VLSI Circuits, VLSI Circuits 2021 Article 9492438 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2021-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSICircuits52068.2021.9492438

Chou, Shaun ; Li, Gu Huan ; Chen, Shawn et al. / A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. 2021 Symposium on VLSI Circuits, VLSI Circuits 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

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title = "A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing",

abstract = "A 16Kb one-time-programmable (OTP) antifuse memory is fabricated in a 5nm high-K, metal-gate FinFET CMOS for the first time. The bootstrap high voltage scheme (BHVS), read endpoint detection (REPD) and pseudo-differential sensing (PDS) are implemented to achieve intrinsic bit error rate (BER) below 1ppb for in-field programming in 5nm SoC and 10 years of data retention at 125°C.",

author = "Shaun Chou and Li, {Gu Huan} and Shawn Chen and Chang, {Jun Hao} and Cheng, {Wan Hsueh} and Wu, {Shao Ding} and Philex Fan and Huang, {Chia En} and Chih, {Yu Der} and Yih Wang and Jonathan Chang",

note = "Publisher Copyright: {\textcopyright} 2021 JSAP.; 35th Symposium on VLSI Circuits, VLSI Circuits 2021 ; Conference date: 13-06-2021 Through 19-06-2021",

year = "2021",

month = jun,

day = "13",

doi = "10.23919/VLSICircuits52068.2021.9492438",

language = "English",

series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 Symposium on VLSI Circuits, VLSI Circuits 2021",

address = "United States",

}

Chou, S, Li, GH, Chen, S, Chang, JH, Cheng, WH, Wu, SD, Fan, P, Huang, CE, Chih, YD, Wang, Y & Chang, J 2021, A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. in 2021 Symposium on VLSI Circuits, VLSI Circuits 2021., 9492438, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, vol. 2021-June, Institute of Electrical and Electronics Engineers Inc., 35th Symposium on VLSI Circuits, VLSI Circuits 2021, Virutal, Online, 21-06-13. https://doi.org/10.23919/VLSICircuits52068.2021.9492438

A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. / Chou, Shaun; Li, Gu Huan; Chen, Shawn et al.
2021 Symposium on VLSI Circuits, VLSI Circuits 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9492438 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2021-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chou, Shaun

AU - Li, Gu Huan

AU - Chen, Shawn

AU - Chang, Jun Hao

AU - Cheng, Wan Hsueh

AU - Wu, Shao Ding

AU - Fan, Philex

AU - Huang, Chia En

AU - Chih, Yu Der

AU - Wang, Yih

AU - Chang, Jonathan

PY - 2021/6/13

Y1 - 2021/6/13

N2 - A 16Kb one-time-programmable (OTP) antifuse memory is fabricated in a 5nm high-K, metal-gate FinFET CMOS for the first time. The bootstrap high voltage scheme (BHVS), read endpoint detection (REPD) and pseudo-differential sensing (PDS) are implemented to achieve intrinsic bit error rate (BER) below 1ppb for in-field programming in 5nm SoC and 10 years of data retention at 125°C.

AB - A 16Kb one-time-programmable (OTP) antifuse memory is fabricated in a 5nm high-K, metal-gate FinFET CMOS for the first time. The bootstrap high voltage scheme (BHVS), read endpoint detection (REPD) and pseudo-differential sensing (PDS) are implemented to achieve intrinsic bit error rate (BER) below 1ppb for in-field programming in 5nm SoC and 10 years of data retention at 125°C.

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T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers

BT - 2021 Symposium on VLSI Circuits, VLSI Circuits 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 35th Symposium on VLSI Circuits, VLSI Circuits 2021

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Chou S, Li GH, Chen S, Chang JH, Cheng WH, Wu SD et al. A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. In 2021 Symposium on VLSI Circuits, VLSI Circuits 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9492438. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). doi: 10.23919/VLSICircuits52068.2021.9492438

A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing

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