A 177mW 10GS/s NRZ DAC with Switching-Glitch Compensation Achieving > 64dBc SFDR and < -77dBc IM3

Hung Yi Huang; Xin Yu Chen; Tai Haur Kuo

doi:10.1109/VLSICircuits18222.2020.9162931

A 177mW 10GS/s NRZ DAC with Switching-Glitch Compensation Achieving > 64dBc SFDR and < -77dBc IM3

Hung Yi Huang, Xin Yu Chen, Tai Haur Kuo

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work presents a 14-bit 10GS/s NRZ DAC in 28nm CMOS. Using the proposed switching-glitch compensation to reduce both the switching-glitch effect and code-dependent supply bouncing, this work achieves > 64dBc SFDR and < -77 dBc IM3 over the entire Nyquist band at 10GS/s. Compared with other state-of-the-art CMOS Nyquist NRZ DACs with resolution ≥ 10bits and f_s ≥ 6GHz, this work has the smallest area of 0.1mm², the lowest power consumption of 177mW, and the best FoM performance.

Original language	English
Title of host publication	2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728199429
DOIs	https://doi.org/10.1109/VLSICircuits18222.2020.9162931
Publication status	Published - 2020 Jun
Event	2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Honolulu, United States Duration: 2020 Jun 16 → 2020 Jun 19

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume	2020-June

Conference

Conference	2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020
Country	United States
City	Honolulu
Period	20-06-16 → 20-06-19

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/VLSICircuits18222.2020.9162931

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Huang, H. Y., Chen, X. Y., & Kuo, T. H. (2020). A 177mW 10GS/s NRZ DAC with Switching-Glitch Compensation Achieving > 64dBc SFDR and < -77dBc IM3. In 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings [9162931] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSICircuits18222.2020.9162931

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abstract = "This work presents a 14-bit 10GS/s NRZ DAC in 28nm CMOS. Using the proposed switching-glitch compensation to reduce both the switching-glitch effect and code-dependent supply bouncing, this work achieves > 64dBc SFDR and < -77 dBc IM3 over the entire Nyquist band at 10GS/s. Compared with other state-of-the-art CMOS Nyquist NRZ DACs with resolution ≥ 10bits and fs ≥ 6GHz, this work has the smallest area of 0.1mm2, the lowest power consumption of 177mW, and the best FoM performance.",

author = "Huang, {Hung Yi} and Chen, {Xin Yu} and Kuo, {Tai Haur}",

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Huang, HY, Chen, XY & Kuo, TH 2020, A 177mW 10GS/s NRZ DAC with Switching-Glitch Compensation Achieving > 64dBc SFDR and < -77dBc IM3. in 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings., 9162931, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, vol. 2020-June, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, United States, 20-06-16. https://doi.org/10.1109/VLSICircuits18222.2020.9162931

A 177mW 10GS/s NRZ DAC with Switching-Glitch Compensation Achieving > 64dBc SFDR and < -77dBc IM3. / Huang, Hung Yi; Chen, Xin Yu; Kuo, Tai Haur.

2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9162931 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Huang HY, Chen XY, Kuo TH. A 177mW 10GS/s NRZ DAC with Switching-Glitch Compensation Achieving > 64dBc SFDR and < -77dBc IM3. In 2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9162931. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). https://doi.org/10.1109/VLSICircuits18222.2020.9162931