A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators

Lung Kai Yeh, Cheng Ying Hsu, Chu Yu Chen, Huey-Ru Chuang

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

This letter presents the design and implementation of a 24-/60-GHz millimeter-wave dual-band on-chip bandpass filter using a 0.18-μm standard CMOS process. The concept of quarter-wavelength stepped-impedance resonator (λ/4 SIR) is utilized to realize stopband characteristics at desired frequencies and reduce the chip size. The structure of the open-circuited dual-behavior resonators (OC-DBRs) produces one passband with two transmission zeros on either side. The size of the designed filter is 1.030 × 0.590 mm 2 .

Original languageEnglish
Pages (from-to)1373-1375
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number12
DOIs
Publication statusPublished - 2008 Dec 8

Fingerprint

Bandpass filters
Resonators
Millimeter waves
Wavelength

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yeh, Lung Kai ; Hsu, Cheng Ying ; Chen, Chu Yu ; Chuang, Huey-Ru. / A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 12. pp. 1373-1375.
@article{0888c298b3314431af61cbafe198faf7,
title = "A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators",
abstract = "This letter presents the design and implementation of a 24-/60-GHz millimeter-wave dual-band on-chip bandpass filter using a 0.18-μm standard CMOS process. The concept of quarter-wavelength stepped-impedance resonator (λ/4 SIR) is utilized to realize stopband characteristics at desired frequencies and reduce the chip size. The structure of the open-circuited dual-behavior resonators (OC-DBRs) produces one passband with two transmission zeros on either side. The size of the designed filter is 1.030 × 0.590 mm 2 .",
author = "Yeh, {Lung Kai} and Hsu, {Cheng Ying} and Chen, {Chu Yu} and Huey-Ru Chuang",
year = "2008",
month = "12",
day = "8",
doi = "10.1109/LED.2008.2006696",
language = "English",
volume = "29",
pages = "1373--1375",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators. / Yeh, Lung Kai; Hsu, Cheng Ying; Chen, Chu Yu; Chuang, Huey-Ru.

In: IEEE Electron Device Letters, Vol. 29, No. 12, 08.12.2008, p. 1373-1375.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators

AU - Yeh, Lung Kai

AU - Hsu, Cheng Ying

AU - Chen, Chu Yu

AU - Chuang, Huey-Ru

PY - 2008/12/8

Y1 - 2008/12/8

N2 - This letter presents the design and implementation of a 24-/60-GHz millimeter-wave dual-band on-chip bandpass filter using a 0.18-μm standard CMOS process. The concept of quarter-wavelength stepped-impedance resonator (λ/4 SIR) is utilized to realize stopband characteristics at desired frequencies and reduce the chip size. The structure of the open-circuited dual-behavior resonators (OC-DBRs) produces one passband with two transmission zeros on either side. The size of the designed filter is 1.030 × 0.590 mm 2 .

AB - This letter presents the design and implementation of a 24-/60-GHz millimeter-wave dual-band on-chip bandpass filter using a 0.18-μm standard CMOS process. The concept of quarter-wavelength stepped-impedance resonator (λ/4 SIR) is utilized to realize stopband characteristics at desired frequencies and reduce the chip size. The structure of the open-circuited dual-behavior resonators (OC-DBRs) produces one passband with two transmission zeros on either side. The size of the designed filter is 1.030 × 0.590 mm 2 .

UR - http://www.scopus.com/inward/record.url?scp=57049159187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57049159187&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2006696

DO - 10.1109/LED.2008.2006696

M3 - Article

VL - 29

SP - 1373

EP - 1375

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -