A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators

Lung Kai Yeh; Cheng Ying Hsu; Chu Yu Chen; Huey Ru Chuang

doi:10.1109/LED.2008.2006696

A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators

Lung Kai Yeh, Cheng Ying Hsu, Chu Yu Chen, Huey Ru Chuang

Institute of Computer and Communication Engineering

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

This letter presents the design and implementation of a 24-/60-GHz millimeter-wave dual-band on-chip bandpass filter using a 0.18-μm standard CMOS process. The concept of quarter-wavelength stepped-impedance resonator (λ/4 SIR) is utilized to realize stopband characteristics at desired frequencies and reduce the chip size. The structure of the open-circuited dual-behavior resonators (OC-DBRs) produces one passband with two transmission zeros on either side. The size of the designed filter is 1.030 × 0.590 mm².

Original language	English
Pages (from-to)	1373-1375
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/LED.2008.2006696
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2006696

Cite this

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title = "A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators",

abstract = "This letter presents the design and implementation of a 24-/60-GHz millimeter-wave dual-band on-chip bandpass filter using a 0.18-μm standard CMOS process. The concept of quarter-wavelength stepped-impedance resonator (λ/4 SIR) is utilized to realize stopband characteristics at desired frequencies and reduce the chip size. The structure of the open-circuited dual-behavior resonators (OC-DBRs) produces one passband with two transmission zeros on either side. The size of the designed filter is 1.030 × 0.590 mm2.",

author = "Yeh, {Lung Kai} and Hsu, {Cheng Ying} and Chen, {Chu Yu} and Chuang, {Huey Ru}",

note = "Funding Information: Manuscript received July 15, 2008; revised September 11, 2008. Current version published November 21, 2008. This work was supported by the National Science Council under Grant NSC 96-2628-E-006-254. The review of this letter was arranged by Editor A. Z. Wang.",

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doi = "10.1109/LED.2008.2006696",

language = "English",

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AU - Chuang, Huey Ru

N1 - Funding Information: Manuscript received July 15, 2008; revised September 11, 2008. Current version published November 21, 2008. This work was supported by the National Science Council under Grant NSC 96-2628-E-006-254. The review of this letter was arranged by Editor A. Z. Wang.

PY - 2008

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N2 - This letter presents the design and implementation of a 24-/60-GHz millimeter-wave dual-band on-chip bandpass filter using a 0.18-μm standard CMOS process. The concept of quarter-wavelength stepped-impedance resonator (λ/4 SIR) is utilized to realize stopband characteristics at desired frequencies and reduce the chip size. The structure of the open-circuited dual-behavior resonators (OC-DBRs) produces one passband with two transmission zeros on either side. The size of the designed filter is 1.030 × 0.590 mm2.

AB - This letter presents the design and implementation of a 24-/60-GHz millimeter-wave dual-band on-chip bandpass filter using a 0.18-μm standard CMOS process. The concept of quarter-wavelength stepped-impedance resonator (λ/4 SIR) is utilized to realize stopband characteristics at desired frequencies and reduce the chip size. The structure of the open-circuited dual-behavior resonators (OC-DBRs) produces one passband with two transmission zeros on either side. The size of the designed filter is 1.030 × 0.590 mm2.

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A 24-/60-GHz CMOS on-chip dual-band bandpass filter using trisection dual-behavior resonators

Abstract

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