This article presented a highly linear image-rejection (IR) low-noise amplifier (LNA) for 2.4 GHz band applications based on 0.18 μm CMOS technology. By using folded PMOS for sinking the third-order intermodulation distortion (IMD3), the IR LNA has high input third-order intercept point (IIP3) at 2.4 GHz. The IR filter, using a high quality factor (Q) active inductor, has 30 dB rejection for 1.6 GHz image band with intermediate frequency of 400 MHz. An IIP3 of + 10 dBm was obtained with a gain of 16.8 dB, noise figure (NF) of 2.5 dB, and power consumption of 12 mW.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering