A 2.5 V switched-current sigma-delta modulator with a novel class AB memory cell

Shuenn-Yuh Lee; Yueh L. Tsai; Wei Z. Su; Po H. Yang

A 2.5 V switched-current sigma-delta modulator with a novel class AB memory cell

Shuenn-Yuh Lee, Yueh L. Tsai, Wei Z. Su, Po H. Yang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.

Original language	English
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	1
Publication status	Published - 2003

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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title = "A 2.5 V switched-current sigma-delta modulator with a novel class AB memory cell",

abstract = "This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.",

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AU - Lee, Shuenn-Yuh

AU - Tsai, Yueh L.

AU - Su, Wei Z.

AU - Yang, Po H.

PY - 2003

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N2 - This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.

AB - This paper is an aim on the representation of a second-order Sigma-Delta Modulator (SDM) with a novel switched-current class AB memory cell. The Benefits of the proposed memory cell such as high input dynamic range, high linearity, signal-independent settling behavior, and low power consumption, are importantly introduced. The SDM is simulated with TSMC 0.35 μm 1P4M standard CMOS process technology, therefore the simulation results reveal that the SDM has maximum signal-to-noise, distortion ratio of 69 dB, power consumption of 0.52 mW, and dynamic range of 75 dB from a single 2.5 V power supply.

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