Abstract
A 26-38 GHz millimeter-wave (MMW) band sub-harmonic mixer has been designed using a 0.15-μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology. The anti-parallel diode pair (APDP) configuration as the basic unit in this sub-harmonic mixer design to suppress the fundamental frequency signals is used. The radio-frequency (RF) and the local oscillator (LO) signals are imported by two Lange couplers in the proposed design, with four pairs of APDPs connected in a ring structure. Superior RF/LO-to-IF (intermediate-frequency) and 2LO-to-RF/IF isolations have been achieved. The sub-harmonic mixer circuit has also exhibited excellent conversion loss of 13.7 dB with LO power of 13 dBm.
Original language | English |
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Pages (from-to) | 2135-2138 |
Number of pages | 4 |
Journal | Microwave and Optical Technology Letters |
Volume | 50 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2008 Aug 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering