A 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire for use in bioelectronic probing

Min Cheng Chen, Chang Hsien Lin, Chia Yi Lin, Hsiao-Chien Chen, Ta Hsien Lee, Mu Yi Hua, Jian Tai Qiu, Chiahua Ho, Fu Liang Yang

Research output: Contribution to journalArticlepeer-review

Abstract

Using a self-aligned sidewall microcrystalline-silicon (μ-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μ-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.

Original languageEnglish
Article number6740855
Pages (from-to)897-901
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume61
Issue number3
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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