A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

Kin Tak Lam; Yi Hao Chen; Ting Jen Hsueh; Shoou Jinn Chang

doi:10.1109/TED.2016.2585762

A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

Kin Tak Lam, Yi Hao Chen, Ting Jen Hsueh, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.

Original language	English
Article number	7509662
Pages (from-to)	3562-3566
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	9
DOIs	https://doi.org/10.1109/TED.2016.2585762
Publication status	Published - 2016 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2016.2585762

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title = "A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology",

abstract = "The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.",

author = "Lam, {Kin Tak} and Chen, {Yi Hao} and Hsueh, {Ting Jen} and Chang, {Shoou Jinn}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

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doi = "10.1109/TED.2016.2585762",

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AB - The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.

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A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

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