A 3-D ZnO-Nanowire Smart Photo Sensor Prepared with Through Silicon via Technology

Kin Tak Lam, Yi Hao Chen, Ting Jen Hsueh, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The authors report the fabrication of a 3-D ZnO-nanowire/MOSFET smart photo sensor using through silicon via technology. It was found that the MOSFET, prepared by hot-wire chemical vapor deposition, exhibits standard saturation and pinch-off characteristics. The dynamic response of the 3-D ZnO-nanowire/MOSFET smart photo sensor was stable and reproducible with an ON-OFF current contrast ratio larger than one order of magnitude. As we turned OFF the ultraviolet illumination, it was found that the decay time was smaller than 1 s for the 3-D ZnO-nanowire/MOSFET smart photo sensor, which was significantly shorter than that observed from the conventional ZnO nanowire photo sensor.

Original languageEnglish
Article number7509662
Pages (from-to)3562-3566
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume63
Issue number9
DOIs
Publication statusPublished - 2016 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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