A 3 nm self-forming InOx diffusion barrier for advanced Cu/porous low-k interconnects

Dung Ching Perng, Kuo Chung Hsu, Jia Bin Yeh

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5 Citations (Scopus)


The copper diffusion barrier properties of a 3 nm self-forming InO x layer on a porous ultralow-k (p-ULK) film have been investigated. A 5 at.% In doped Cu film was directly deposited onto porous low-k films by co-sputtering, followed by annealing at various temperatures. Transmission electron microscopy (TEM) images showed that a 3 nm layer was self-formed at the interface between Cu-In and p-ULK films after annealing at 400 °C for 1 h. An EDS line scan on the region near this interface showed obvious accumulation of In at the interface. X-ray photoelectron spectroscopy (XPS) analyses indicated that the self-formed interfacial layer was InOx . The self-forming InOx layer prevented Cu agglomeration on the p-ULK film surface. The XPS atomic depth profiles showed that the self-formed InO x barrier was thermally stable against Cu diffusion to at least 500 °C for 5 h. The sheet resistance of the post 500 °C annealed Cu-In film was comparable to that of a pure Cu film. The Cu-In self-forming barrier approach may be a viable candidate for Cu/p-ULK interconnects.

Original languageEnglish
Pages (from-to)05FA041-05FA044
JournalJapanese journal of applied physics
Issue number5 PART 3
Publication statusPublished - 2010 May

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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