A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit

Lih Yih Chiou, Chi Ray Huang, Chang Chieh Cheng, Yu Lin Tsai

Research output: Contribution to conferencePaperpeer-review

4 Citations (Scopus)

Abstract

Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.

Original languageEnglish
Pages337-340
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: 2013 Feb 252013 Feb 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan
CityKaohsiung
Period13-02-2513-02-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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