A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit

Lih Yih Chiou; Chi Ray Huang; Chang Chieh Cheng; Yu Lin Tsai

doi:10.1109/ISNE.2013.6512360

A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit

Lih Yih Chiou, Chi Ray Huang, Chang Chieh Cheng, Yu Lin Tsai

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

6 Citations (Scopus)

Abstract

Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.

Original language	English
Pages	337-340
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2013.6512360
Publication status	Published - 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 2013 Feb 25 → 2013 Feb 26

Other

Other	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	13-02-25 → 13-02-26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/ISNE.2013.6512360

Cite this

@conference{afe7b51cd1ab49e58ed253e3d79c6319,

title = "A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit",

abstract = "Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.",

author = "Chiou, {Lih Yih} and Huang, {Chi Ray} and Cheng, {Chang Chieh} and Tsai, {Yu Lin}",

year = "2013",

doi = "10.1109/ISNE.2013.6512360",

language = "English",

pages = "337--340",

}

A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit. / Chiou, Lih Yih; Huang, Chi Ray; Cheng, Chang Chieh et al.
2013. 337-340 Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit

AU - Chiou, Lih Yih

AU - Huang, Chi Ray

AU - Cheng, Chang Chieh

AU - Tsai, Yu Lin

PY - 2013

Y1 - 2013

N2 - Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.

AB - Lowering supply voltage from super-threshold to sub-threshold is a promising approach for ultra-low energy applications. However, the degraded cell stability limits the voltage scalability of the conventional 6T SRAM. In this paper, we proposed a novel local assist circuitry that enables low energy and variability resilient operation at ultra-low voltages for differential sub-threshold SRAM design. The process variation tolerant local sense amplifier and charge-sharing based precharge scheme are utilized to ensure the read stability at ultra-low voltage region. A 16kb 6T SRAM marco is implemented in 90nm CMOS technology to demonstrate the functionality of our proposed local assist circuits. Its minimum energy consumption is 0.624pJ/access, operating at 26.3MHz and 400mV.

UR - http://www.scopus.com/inward/record.url?scp=84877962483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877962483&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2013.6512360

DO - 10.1109/ISNE.2013.6512360

M3 - Paper

AN - SCOPUS:84877962483

SP - 337

EP - 340

T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

A 300mV Sub-1pJ differential 6T sub-threshold SRAM with low energy and variability resilient local assist circuit

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