A 30GHz bipolar production technology with high quality passive components

Chwan Ying Lee, Kuan Lun Chang, Tsyr Shyang Liou, Tzuen His Huang, Shin Chi Lu, Denny Tang

Research output: Contribution to conferencePaperpeer-review

Abstract

This paper presents a much simpler single polysilicon bipolar technology, which can provide low cost, high performance transistor featuring 30GHz fT. Added to this process are polysilicon resistors, high Q inductors and metal-insulator-metal (MIM) capacitors. These data clearly demonstrated that these passive components could be successfully integrated into an existing bipolar process for use in wireless communication applications. These features provide a higher level of system integration in RF circuits.

Original languageEnglish
Pages179-182
Number of pages4
Publication statusPublished - 1999
Event8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore
Duration: 1999 Sept 81999 Sept 10

Other

Other8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
Country/TerritorySingapore
CitySingapore
Period99-09-0899-09-10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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