Abstract
This paper presents a much simpler single polysilicon bipolar technology, which can provide low cost, high performance transistor featuring 30GHz fT. Added to this process are polysilicon resistors, high Q inductors and metal-insulator-metal (MIM) capacitors. These data clearly demonstrated that these passive components could be successfully integrated into an existing bipolar process for use in wireless communication applications. These features provide a higher level of system integration in RF circuits.
Original language | English |
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Pages | 179-182 |
Number of pages | 4 |
Publication status | Published - 1999 |
Event | 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore Duration: 1999 Sept 8 → 1999 Sept 10 |
Other
Other | 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 |
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Country/Territory | Singapore |
City | Singapore |
Period | 99-09-08 → 99-09-10 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering