A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Hong Zhi Liu, Hou Kuei Huang, Ray Jay Chiu, Chen Kuo Chu, Che Hung Lin, Chih Cheng Wang, Yeong-Her Wang, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang

Research output: Contribution to journalArticle

Abstract

A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

Original languageEnglish
Pages (from-to)311-313
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume44
Issue number4
DOIs
Publication statusPublished - 2005 Feb 20

Fingerprint

S band
power amplifiers
Power amplifiers
aluminum gallium arsenides
Wave transmission
Noise figure
Printed circuit boards
Electric lines
Radar
dividers
printed circuits
circuit boards
power efficiency
transmission lines
linearity
radar
amplifiers
Costs
output
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Liu, H. Z., Huang, H. K., Chiu, R. J., Chu, C. K., Lin, C. H., Wang, C. C., ... Chang, C. S. (2005). A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications. Microwave and Optical Technology Letters, 44(4), 311-313. https://doi.org/10.1002/mop.20620
Liu, Hong Zhi ; Huang, Hou Kuei ; Chiu, Ray Jay ; Chu, Chen Kuo ; Lin, Che Hung ; Wang, Chih Cheng ; Wang, Yeong-Her ; Chang, Ching Hsueh ; Wu, Chang Luen ; Chang, Chian Sern. / A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications. In: Microwave and Optical Technology Letters. 2005 ; Vol. 44, No. 4. pp. 311-313.
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Liu, HZ, Huang, HK, Chiu, RJ, Chu, CK, Lin, CH, Wang, CC, Wang, Y-H, Chang, CH, Wu, CL & Chang, CS 2005, 'A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications', Microwave and Optical Technology Letters, vol. 44, no. 4, pp. 311-313. https://doi.org/10.1002/mop.20620

A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications. / Liu, Hong Zhi; Huang, Hou Kuei; Chiu, Ray Jay; Chu, Chen Kuo; Lin, Che Hung; Wang, Chih Cheng; Wang, Yeong-Her; Chang, Ching Hsueh; Wu, Chang Luen; Chang, Chian Sern.

In: Microwave and Optical Technology Letters, Vol. 44, No. 4, 20.02.2005, p. 311-313.

Research output: Contribution to journalArticle

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AU - Liu, Hong Zhi

AU - Huang, Hou Kuei

AU - Chiu, Ray Jay

AU - Chu, Chen Kuo

AU - Lin, Che Hung

AU - Wang, Chih Cheng

AU - Wang, Yeong-Her

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

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AB - A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

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