A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Hong Zhi Liu; Hou Kuei Huang; Ray Jay Chiu; Chen Kuo Chu; Che Hung Lin; Chih Cheng Wang; Yeong-Her Wang; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang

doi:10.1002/mop.20620

A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Hong Zhi Liu, Hou Kuei Huang, Ray Jay Chiu, Chen Kuo Chu, Che Hung Lin, Chih Cheng Wang, Yeong-Her Wang, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang

Research output: Contribution to journal › Article › peer-review

Abstract

A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 ^rd-order intercept point is also measured.

Original language	English
Pages (from-to)	311-313
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	44
Issue number	4
DOIs	https://doi.org/10.1002/mop.20620
Publication status	Published - 2005 Feb 20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1002/mop.20620

Cite this

@article{1de00e11a4144ed4a51f0afa4db37905,

title = "A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications",

abstract = "A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.",

author = "Liu, {Hong Zhi} and Huang, {Hou Kuei} and Chiu, {Ray Jay} and Chu, {Chen Kuo} and Lin, {Che Hung} and Wang, {Chih Cheng} and Yeong-Her Wang and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern}",

year = "2005",

month = feb,

day = "20",

doi = "10.1002/mop.20620",

language = "English",

volume = "44",

pages = "311--313",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley and Sons Inc.",

number = "4",

}

TY - JOUR

T1 - A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

AU - Liu, Hong Zhi

AU - Huang, Hou Kuei

AU - Chiu, Ray Jay

AU - Chu, Chen Kuo

AU - Lin, Che Hung

AU - Wang, Chih Cheng

AU - Wang, Yeong-Her

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

PY - 2005/2/20

Y1 - 2005/2/20

N2 - A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

AB - A high-performance S-band power amplifier fabricated on a low-cost 20-mil-thick FR-4 printed circuit board (PCB) for S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinxon power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB small-signal gain, 38-dBm 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3 rd-order intercept point is also measured.

UR - http://www.scopus.com/inward/record.url?scp=19944433244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944433244&partnerID=8YFLogxK

U2 - 10.1002/mop.20620

DO - 10.1002/mop.20620

M3 - Article

AN - SCOPUS:19944433244

SN - 0895-2477

VL - 44

SP - 311

EP - 313

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 4

ER -

A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this