A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor

Wen Chian Lai; Huey-Ru Chuang

doi:10.1109/MWSYM.2015.7166963

A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor

Wen Chian Lai, Huey-Ru Chuang

Institute of Computer and Communication Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm².

Original language	English
Title of host publication	2015 IEEE MTT-S International Microwave Symposium, IMS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479982752
DOIs	https://doi.org/10.1109/MWSYM.2015.7166963
Publication status	Published - 2015 Jul 24
Event	IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States Duration: 2015 May 17 → 2015 May 22

Publication series

Name	2015 IEEE MTT-S International Microwave Symposium, IMS 2015

Other

Other	IEEE MTT-S International Microwave Symposium, IMS 2015
Country	United States
City	Phoenix
Period	15-05-17 → 15-05-22

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Signal Processing
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2015.7166963

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Cite this

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title = "A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor",

abstract = "A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.",

author = "Lai, {Wen Chian} and Huey-Ru Chuang",

year = "2015",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "IEEE MTT-S International Microwave Symposium, IMS 2015 ; Conference date: 17-05-2015 Through 22-05-2015",

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Lai, WC & Chuang, H-R 2015, A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor. in 2015 IEEE MTT-S International Microwave Symposium, IMS 2015., 7166963, 2015 IEEE MTT-S International Microwave Symposium, IMS 2015, Institute of Electrical and Electronics Engineers Inc., IEEE MTT-S International Microwave Symposium, IMS 2015, Phoenix, United States, 15-05-17. https://doi.org/10.1109/MWSYM.2015.7166963

A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor. / Lai, Wen Chian; Chuang, Huey-Ru.

2015 IEEE MTT-S International Microwave Symposium, IMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7166963 (2015 IEEE MTT-S International Microwave Symposium, IMS 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.

AB - A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.

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