A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor

Wen Chian Lai, Huey-Ru Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.

Original languageEnglish
Title of host publication2015 IEEE MTT-S International Microwave Symposium, IMS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479982752
DOIs
Publication statusPublished - 2015 Jul 24
EventIEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States
Duration: 2015 May 172015 May 22

Publication series

Name2015 IEEE MTT-S International Microwave Symposium, IMS 2015

Other

OtherIEEE MTT-S International Microwave Symposium, IMS 2015
CountryUnited States
CityPhoenix
Period15-05-1715-05-22

Fingerprint

Insertion losses
Switches
Bandwidth

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Signal Processing
  • Electrical and Electronic Engineering

Cite this

Lai, W. C., & Chuang, H-R. (2015). A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor. In 2015 IEEE MTT-S International Microwave Symposium, IMS 2015 [7166963] (2015 IEEE MTT-S International Microwave Symposium, IMS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2015.7166963
Lai, Wen Chian ; Chuang, Huey-Ru. / A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor. 2015 IEEE MTT-S International Microwave Symposium, IMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE MTT-S International Microwave Symposium, IMS 2015).
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abstract = "A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.",
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Lai, WC & Chuang, H-R 2015, A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor. in 2015 IEEE MTT-S International Microwave Symposium, IMS 2015., 7166963, 2015 IEEE MTT-S International Microwave Symposium, IMS 2015, Institute of Electrical and Electronics Engineers Inc., IEEE MTT-S International Microwave Symposium, IMS 2015, Phoenix, United States, 15-05-17. https://doi.org/10.1109/MWSYM.2015.7166963

A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor. / Lai, Wen Chian; Chuang, Huey-Ru.

2015 IEEE MTT-S International Microwave Symposium, IMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7166963 (2015 IEEE MTT-S International Microwave Symposium, IMS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.

AB - A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.

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Lai WC, Chuang H-R. A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor. In 2015 IEEE MTT-S International Microwave Symposium, IMS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7166963. (2015 IEEE MTT-S International Microwave Symposium, IMS 2015). https://doi.org/10.1109/MWSYM.2015.7166963