Abstract
A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE MTT-S International Microwave Symposium, IMS 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479982752 |
| DOIs | |
| Publication status | Published - 2015 Jul 24 |
| Event | IEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States Duration: 2015 May 17 → 2015 May 22 |
Publication series
| Name | 2015 IEEE MTT-S International Microwave Symposium, IMS 2015 |
|---|
Other
| Other | IEEE MTT-S International Microwave Symposium, IMS 2015 |
|---|---|
| Country | United States |
| City | Phoenix |
| Period | 15-05-17 → 15-05-22 |
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All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Signal Processing
- Electrical and Electronic Engineering
Cite this
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A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor. / Lai, Wen Chian; Chuang, Huey-Ru.
2015 IEEE MTT-S International Microwave Symposium, IMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7166963 (2015 IEEE MTT-S International Microwave Symposium, IMS 2015).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor
AU - Lai, Wen Chian
AU - Chuang, Huey-Ru
PY - 2015/7/24
Y1 - 2015/7/24
N2 - A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.
AB - A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.
UR - http://www.scopus.com/inward/record.url?scp=84946092511&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946092511&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2015.7166963
DO - 10.1109/MWSYM.2015.7166963
M3 - Conference contribution
AN - SCOPUS:84946092511
T3 - 2015 IEEE MTT-S International Microwave Symposium, IMS 2015
BT - 2015 IEEE MTT-S International Microwave Symposium, IMS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -