@inproceedings{f2df2fa5fd5f4aea9afd48f5b7ff3bc1,
title = "A 40-110 GHz high-isolation CMOS traveling-wave T/R switch by using parallel inductor",
abstract = "A 40-110 GHz SPDT T/R switch fabricated in 90 nm CMOS is presented. The traveling wave switch is used to obtain low insertion loss and wide operating bandwidth. To enhance the isolation performance, the parallel inductor is adopted. The insertion loss is improved with body-floating. The measurement results show that the insertion loss is lower than 4 dB and isolation is better than 21 dB. A very good isolation value higher than 56 dB at 109 GHz is achieved. The chip core size is 0.11 mm2.",
author = "Lai, {Wen Chian} and Huey-Ru Chuang",
year = "2015",
month = jul,
day = "24",
doi = "10.1109/MWSYM.2015.7166963",
language = "English",
series = "2015 IEEE MTT-S International Microwave Symposium, IMS 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE MTT-S International Microwave Symposium, IMS 2015",
address = "United States",
note = "IEEE MTT-S International Microwave Symposium, IMS 2015 ; Conference date: 17-05-2015 Through 22-05-2015",
}