A 5 Gb/s 1/4-rate clock and data recovery circuit using dynamic stepwise bang-bang phase detector

Yen Long Lee; Soon Jyh Chang; Rong Sing Chu; Ying Zu Lin; Yen Chi Chen; Goh Jih Ren; Chung Ming Huang

doi:10.1109/IPEC.2012.6522645

A 5 Gb/s 1/4-rate clock and data recovery circuit using dynamic stepwise bang-bang phase detector

Yen Long Lee, Soon Jyh Chang, Rong Sing Chu, Ying Zu Lin, Yen Chi Chen, Goh Jih Ren, Chung Ming Huang

Research output: Contribution to conference › Paper › peer-review

8 Citations (Scopus)

Abstract

This paper presents a 5-Gb/s 1/4-rate clock and data recovery (CDR) circuit. The proposed dynamic stepwise bang-bang phase detector comprises the advantage of linear and bang-bang phase detectors. The CDR adjusts the charge pump currents and the interpolation weight of phase interpolators according to the phase error between input data and feedback clock. This CDR circuit was fabricated in TSMC 1P9M 90-nm CMOS technology. It consumes 16.8 mW from a 1.2-V supply and occupies an active area of 0.3 mm². The measured peak-to-peak jitter and rms jitter of the recovered clock are 42.37 ps and 7.06 ps for a 5-Gb/s 2⁷-1 PRBS, respectively. Moreover, the measured peak-to-peak jitter and rms jitter of the recovered data are 53.33 ps and 8.89 ps for a 5-Gb/s 2⁷-1 PRBS, respectively.

Original language	English
Pages	141-144
Number of pages	4
DOIs	https://doi.org/10.1109/IPEC.2012.6522645
Publication status	Published - 2012
Event	2012 IEEE Asian Solid-State Circuits Conference, A-SSCC 2012 - Kobe, Japan Duration: 2012 Nov 12 → 2012 Nov 14

Other

Other	2012 IEEE Asian Solid-State Circuits Conference, A-SSCC 2012
Country/Territory	Japan
City	Kobe
Period	12-11-12 → 12-11-14

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/IPEC.2012.6522645

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title = "A 5 Gb/s 1/4-rate clock and data recovery circuit using dynamic stepwise bang-bang phase detector",

abstract = "This paper presents a 5-Gb/s 1/4-rate clock and data recovery (CDR) circuit. The proposed dynamic stepwise bang-bang phase detector comprises the advantage of linear and bang-bang phase detectors. The CDR adjusts the charge pump currents and the interpolation weight of phase interpolators according to the phase error between input data and feedback clock. This CDR circuit was fabricated in TSMC 1P9M 90-nm CMOS technology. It consumes 16.8 mW from a 1.2-V supply and occupies an active area of 0.3 mm2. The measured peak-to-peak jitter and rms jitter of the recovered clock are 42.37 ps and 7.06 ps for a 5-Gb/s 27-1 PRBS, respectively. Moreover, the measured peak-to-peak jitter and rms jitter of the recovered data are 53.33 ps and 8.89 ps for a 5-Gb/s 27-1 PRBS, respectively.",

author = "Lee, {Yen Long} and Chang, {Soon Jyh} and Chu, {Rong Sing} and Lin, {Ying Zu} and Chen, {Yen Chi} and Ren, {Goh Jih} and Huang, {Chung Ming}",

year = "2012",

doi = "10.1109/IPEC.2012.6522645",

language = "English",

pages = "141--144",

note = "2012 IEEE Asian Solid-State Circuits Conference, A-SSCC 2012 ; Conference date: 12-11-2012 Through 14-11-2012",

}

A 5 Gb/s 1/4-rate clock and data recovery circuit using dynamic stepwise bang-bang phase detector. / Lee, Yen Long; Chang, Soon Jyh; Chu, Rong Sing; Lin, Ying Zu; Chen, Yen Chi; Ren, Goh Jih; Huang, Chung Ming.

2012. 141-144 Paper presented at 2012 IEEE Asian Solid-State Circuits Conference, A-SSCC 2012, Kobe, Japan.

Research output: Contribution to conference › Paper › peer-review

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AU - Lee, Yen Long

AU - Chang, Soon Jyh

AU - Chu, Rong Sing

AU - Lin, Ying Zu

AU - Chen, Yen Chi

AU - Ren, Goh Jih

AU - Huang, Chung Ming

PY - 2012

Y1 - 2012

N2 - This paper presents a 5-Gb/s 1/4-rate clock and data recovery (CDR) circuit. The proposed dynamic stepwise bang-bang phase detector comprises the advantage of linear and bang-bang phase detectors. The CDR adjusts the charge pump currents and the interpolation weight of phase interpolators according to the phase error between input data and feedback clock. This CDR circuit was fabricated in TSMC 1P9M 90-nm CMOS technology. It consumes 16.8 mW from a 1.2-V supply and occupies an active area of 0.3 mm2. The measured peak-to-peak jitter and rms jitter of the recovered clock are 42.37 ps and 7.06 ps for a 5-Gb/s 27-1 PRBS, respectively. Moreover, the measured peak-to-peak jitter and rms jitter of the recovered data are 53.33 ps and 8.89 ps for a 5-Gb/s 27-1 PRBS, respectively.

AB - This paper presents a 5-Gb/s 1/4-rate clock and data recovery (CDR) circuit. The proposed dynamic stepwise bang-bang phase detector comprises the advantage of linear and bang-bang phase detectors. The CDR adjusts the charge pump currents and the interpolation weight of phase interpolators according to the phase error between input data and feedback clock. This CDR circuit was fabricated in TSMC 1P9M 90-nm CMOS technology. It consumes 16.8 mW from a 1.2-V supply and occupies an active area of 0.3 mm2. The measured peak-to-peak jitter and rms jitter of the recovered clock are 42.37 ps and 7.06 ps for a 5-Gb/s 27-1 PRBS, respectively. Moreover, the measured peak-to-peak jitter and rms jitter of the recovered data are 53.33 ps and 8.89 ps for a 5-Gb/s 27-1 PRBS, respectively.

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A 5 Gb/s 1/4-rate clock and data recovery circuit using dynamic stepwise bang-bang phase detector

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