A 60-GHz millimeter-wave bandpass filter using 0.18-μm CMOS technology

Cheng Ying Hsu; Chu Yu Chen; Huey Ru Chuang

doi:10.1109/LED.2007.915369

A 60-GHz millimeter-wave bandpass filter using 0.18-μm CMOS technology

Cheng Ying Hsu, Chu Yu Chen, Huey Ru Chuang

Institute of Computer and Communication Engineering

Research output: Contribution to journal › Article › peer-review

111 Citations (Scopus)

Abstract

This letter presents the design and implementation of a 60-GHz millimeter-wave RF-integrated-circuit-on-chip bandpass filter using a 0.18-μm standard CMOS process. A planar ring resonator structure with dual-transmission zeros was adopted in the design of this CMOS filter. The die size of the chip is 1.148 × 1.49 mm². The investigations of sensitivity to the insertion loss and the passband bandwidth for different perturbation stub sizes are also studied. The filter has a 3-dB bandwidth of about 12 GHz at the center frequency of 64 GHz. The measured insertion loss of the passband is about 4.9 dB, and the return loss is better than 10 dB within the passband.

Original language	English
Pages (from-to)	246-248
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	3
DOIs	https://doi.org/10.1109/LED.2007.915369
Publication status	Published - 2008 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.915369

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@article{acd8f7cb80374dedb3b7489f97df546e,

title = "A 60-GHz millimeter-wave bandpass filter using 0.18-μm CMOS technology",

abstract = "This letter presents the design and implementation of a 60-GHz millimeter-wave RF-integrated-circuit-on-chip bandpass filter using a 0.18-μm standard CMOS process. A planar ring resonator structure with dual-transmission zeros was adopted in the design of this CMOS filter. The die size of the chip is 1.148 × 1.49 mm2. The investigations of sensitivity to the insertion loss and the passband bandwidth for different perturbation stub sizes are also studied. The filter has a 3-dB bandwidth of about 12 GHz at the center frequency of 64 GHz. The measured insertion loss of the passband is about 4.9 dB, and the return loss is better than 10 dB within the passband.",

author = "Hsu, {Cheng Ying} and Chen, {Chu Yu} and Chuang, {Huey Ru}",

year = "2008",

month = mar,

doi = "10.1109/LED.2007.915369",

language = "English",

volume = "29",

pages = "246--248",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - A 60-GHz millimeter-wave bandpass filter using 0.18-μm CMOS technology

AU - Hsu, Cheng Ying

AU - Chen, Chu Yu

AU - Chuang, Huey Ru

PY - 2008/3

Y1 - 2008/3

N2 - This letter presents the design and implementation of a 60-GHz millimeter-wave RF-integrated-circuit-on-chip bandpass filter using a 0.18-μm standard CMOS process. A planar ring resonator structure with dual-transmission zeros was adopted in the design of this CMOS filter. The die size of the chip is 1.148 × 1.49 mm2. The investigations of sensitivity to the insertion loss and the passband bandwidth for different perturbation stub sizes are also studied. The filter has a 3-dB bandwidth of about 12 GHz at the center frequency of 64 GHz. The measured insertion loss of the passband is about 4.9 dB, and the return loss is better than 10 dB within the passband.

AB - This letter presents the design and implementation of a 60-GHz millimeter-wave RF-integrated-circuit-on-chip bandpass filter using a 0.18-μm standard CMOS process. A planar ring resonator structure with dual-transmission zeros was adopted in the design of this CMOS filter. The die size of the chip is 1.148 × 1.49 mm2. The investigations of sensitivity to the insertion loss and the passband bandwidth for different perturbation stub sizes are also studied. The filter has a 3-dB bandwidth of about 12 GHz at the center frequency of 64 GHz. The measured insertion loss of the passband is about 4.9 dB, and the return loss is better than 10 dB within the passband.

UR - http://www.scopus.com/inward/record.url?scp=40749140779&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40749140779&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.915369

DO - 10.1109/LED.2007.915369

M3 - Article

AN - SCOPUS:40749140779

SN - 0741-3106

VL - 29

SP - 246

EP - 248

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

A 60-GHz millimeter-wave bandpass filter using 0.18-μm CMOS technology

Abstract

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