A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Che Hung Lin, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

Original languageEnglish
Pages (from-to)151-153
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume17
Issue number2
DOIs
Publication statusPublished - 2007 Feb 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Chu, C. K., Huang, H. K., Liu, H. Z., Lin, C. H., Chang, C. H., Wu, C. L., Chang, C. S., & Wang, Y. H. (2007). A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier. IEEE Microwave and Wireless Components Letters, 17(2), 151-153. https://doi.org/10.1109/LMWC.2006.890346