A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

Chen Kuo Chu; Hou Kuei Huang; Hong Zhi Liu; Che Hung Lin; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang

doi:10.1109/LMWC.2006.890346

A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Che Hung Lin, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

Original language	English
Pages (from-to)	151-153
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2006.890346
Publication status	Published - 2007 Feb

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2006.890346

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title = "A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier",

abstract = "This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.",

author = "Chu, {Chen Kuo} and Huang, {Hou Kuei} and Liu, {Hong Zhi} and Lin, {Che Hung} and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern} and Wang, {Yeong Her}",

note = "Funding Information: Manuscript received July 17, 2006; revised November 6, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2215-E-006-001, the MOE Program for Promoting Academic Excellence of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.",

year = "2007",

month = feb,

doi = "10.1109/LMWC.2006.890346",

language = "English",

volume = "17",

pages = "151--153",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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T1 - A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

AU - Chu, Chen Kuo

AU - Huang, Hou Kuei

AU - Liu, Hong Zhi

AU - Lin, Che Hung

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

AU - Wang, Yeong Her

N1 - Funding Information: Manuscript received July 17, 2006; revised November 6, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2215-E-006-001, the MOE Program for Promoting Academic Excellence of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.

PY - 2007/2

Y1 - 2007/2

N2 - This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

AB - This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

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A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

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