A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

Chen Kuo Chu; Hou Kuei Huang; Hong Zhi Liu; Che Hung Lin; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang

doi:10.1109/LMWC.2006.890346

A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

Chen Kuo Chu
, Hou Kuei Huang
, Hong Zhi Liu
, Che Hung Lin
, Ching Hsueh Chang
, Chang Luen Wu
, Chian Sern Chang
, Yeong Her Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

Original language	English
Pages (from-to)	151-153
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2006.890346
Publication status	Published - 2007 Feb

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2006.890346

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@article{abca11228bb2409dbcddedf2c5e28b34,

title = "A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier",

abstract = "This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33\% power added efficiency at 9.7 GHz can be achieved.",

author = "Chu, \{Chen Kuo\} and Huang, \{Hou Kuei\} and Liu, \{Hong Zhi\} and Lin, \{Che Hung\} and Chang, \{Ching Hsueh\} and Wu, \{Chang Luen\} and Chang, \{Chian Sern\} and Wang, \{Yeong Her\}",

note = "Funding Information: Manuscript received July 17, 2006; revised November 6, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2215-E-006-001, the MOE Program for Promoting Academic Excellence of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.",

year = "2007",

month = feb,

doi = "10.1109/LMWC.2006.890346",

language = "English",

volume = "17",

pages = "151--153",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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T1 - A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

AU - Chu, Chen Kuo

AU - Huang, Hou Kuei

AU - Liu, Hong Zhi

AU - Lin, Che Hung

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

AU - Wang, Yeong Her

N1 - Funding Information: Manuscript received July 17, 2006; revised November 6, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2215-E-006-001, the MOE Program for Promoting Academic Excellence of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.

PY - 2007/2

Y1 - 2007/2

N2 - This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

AB - This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Ω input and output impedance. Based on 0.35-μm gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved.

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DO - 10.1109/LMWC.2006.890346

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SP - 151

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 2

ER -

A 9.1-10.7 GHz 10-W, 40-dB gain four-stage PHEMT MMIC power amplifier

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