A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

J. D. Guo; C. I. Lin; M. S. Feng; F. M. Pan; G. C. Chi; C. T. Lee

doi:10.1063/1.116471

A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

J. D. Guo, C. I. Lin, M. S. Feng, F. M. Pan, G. C. Chi, C. T. Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.

Original language	English
Pages (from-to)	235-237
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	2
DOIs	https://doi.org/10.1063/1.116471
Publication status	Published - 1996 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.116471

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title = "A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films",

abstract = "Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.",

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AU - Guo, J. D.

AU - Lin, C. I.

AU - Feng, M. S.

AU - Pan, F. M.

AU - Chi, G. C.

AU - Lee, C. T.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.

AB - Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.

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A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

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