A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

J. D. Guo, C. I. Lin, M. S. Feng, F. M. Pan, G. C. Chi, C. T. Lee

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Abstract

Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.

Original languageEnglish
Pages (from-to)235-237
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number2
DOIs
Publication statusPublished - 1996 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Guo, J. D., Lin, C. I., Feng, M. S., Pan, F. M., Chi, G. C., & Lee, C. T. (1996). A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films. Applied Physics Letters, 68(2), 235-237. https://doi.org/10.1063/1.116471