Abstract
Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 235-237 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 68 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1996 Dec 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Guo, J. D., Lin, C. I., Feng, M. S., Pan, F. M., Chi, G. C., & Lee, C. T. (1996). A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films. Applied Physics Letters, 68(2), 235-237. https://doi.org/10.1063/1.116471