Abstract
Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm-3. The lowest value for the specific contact resistivity of 6.5×10-5 cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV.
Original language | English |
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Pages (from-to) | 235-237 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1996 Dec 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)