A built-in self-test scheme for the post-bond test of TSVs in 3D ICs

Yu Jen Huang, Jin Fu Li, Ji Jan Chen, Ding Ming Kwai, Yung Fa Chou, Cheng Wen Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

70 Citations (Scopus)


Three-dimensional (3D) integration using through silicon via (TSV) has been widely acknowledged as one future integrated-circuit (IC) technology. A 3D IC including multiple dies connected with TSVs offers many benefits over current 2D ICs. However, the testing of 3D ICs is much more difficult than that of 2D ICs. In this paper, we propose a cost-effective built-in self-test circuit (BIST) to test TSVs of a 3D IC. The BIST scheme, arranging the TSVs into arrays similar to memory, has the features of low test/diagnosis time and low silicon area cost. Simulation results show that the area overhead of the BIST circuit implemented with 0.18m CMOS technology for a 1632 TSV array in which each TSV cell size is 45m2 is 2.24%. Also, the BIST needs only 130 clock cycles to test the TSV array with stuck-at faults. In comparison with the IEEE 1500-based test approach, the BIST scheme can achieve 85.2% area cost and 93.6% test time reduction.

Original languageEnglish
Title of host publicationProceedings - 2011 29th IEEE VLSI Test Symposium, VTS 2011
Number of pages6
Publication statusPublished - 2011 Jul 1
Event2011 29th IEEE VLSI Test Symposium, VTS 2011 - Dana Point, CA, United States
Duration: 2011 May 12011 May 5

Publication series

NameProceedings of the IEEE VLSI Test Symposium


Conference2011 29th IEEE VLSI Test Symposium, VTS 2011
Country/TerritoryUnited States
CityDana Point, CA

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering


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