A combinatorial study of metal gate/HfO2 MOSCAPS

M. L. Green, Kao-Shuo Chang, I. Takeuchi, T. Chikyow

Research output: Contribution to journalConference article

Abstract

Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (ΔVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90% of Ni and Ti, and 75% of Pt were attained in the library. A more negative ΔVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φm) near the Ti-rich corners and higher Φm near Ni- and Pt-rich corners. Measured JL values are consistent with the observed ΔVfb variations. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)341-350
Number of pages10
JournalECS Transactions
Volume3
Issue number3
DOIs
Publication statusPublished - 2006 Dec 1
EventPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

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Metals
Wavelength dispersive spectroscopy
Electrodes
Gate dielectrics
Surveying
Leakage currents
Sputtering
Current density
Thin films
Electric potential
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Green, M. L. ; Chang, Kao-Shuo ; Takeuchi, I. ; Chikyow, T. / A combinatorial study of metal gate/HfO2 MOSCAPS. In: ECS Transactions. 2006 ; Vol. 3, No. 3. pp. 341-350.
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abstract = "Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (ΔVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90{\%} of Ni and Ti, and 75{\%} of Pt were attained in the library. A more negative ΔVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φm) near the Ti-rich corners and higher Φm near Ni- and Pt-rich corners. Measured JL values are consistent with the observed ΔVfb variations. copyright The Electrochemical Society.",
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Green, ML, Chang, K-S, Takeuchi, I & Chikyow, T 2006, 'A combinatorial study of metal gate/HfO2 MOSCAPS', ECS Transactions, vol. 3, no. 3, pp. 341-350. https://doi.org/10.1149/1.2355725

A combinatorial study of metal gate/HfO2 MOSCAPS. / Green, M. L.; Chang, Kao-Shuo; Takeuchi, I.; Chikyow, T.

In: ECS Transactions, Vol. 3, No. 3, 01.12.2006, p. 341-350.

Research output: Contribution to journalConference article

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