A combinatorial study of metal gate/HfO2 MOSCAPS

M. L. Green, K. S. Chang, I. Takeuchi, T. Chikyow

Research output: Contribution to journalConference article

Abstract

Combinatorial methodology is a rapid technique for surveying new gate dielectrics and gate metal electrodes for the very complex advanced CMOS gate stack. Here, we report on a typical metal gate electrode alloy system, the Ni-Ti-Pt ternary. We have fabricated this metal gate thin film library on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (ΔVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that compositions containing up to 90% of Ni and Ti, and 75% of Pt were attained in the library. A more negative ΔVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller work function (Φm) near the Ti-rich corners and higher Φm near Ni- and Pt-rich corners. Measured JL values are consistent with the observed ΔVfb variations. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)341-350
Number of pages10
JournalECS Transactions
Volume3
Issue number3
DOIs
Publication statusPublished - 2006 Dec 1
EventPhysics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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