A compact 6.5-W PHEMT MMIC power amplifier for Ku-band applications

Che Hung Lin; Hong Zhi Liu; Chen Kuo Chu; Hou Kuei Huang; Chi Chuan Liu; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang

doi:10.1109/LMWC.2006.890347

A compact 6.5-W PHEMT MMIC power amplifier for Ku-band applications

Che Hung Lin, Hong Zhi Liu, Chen Kuo Chu, Hou Kuei Huang, Chi Chuan Liu, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554 mm² (3.64 mm × 2.35 mm) is designed to fully match 50-Ω input and output impedance. Under 8 V and 2000 mA dc bias condition, the PA deliver 38.1 dBm (6.5 W) saturated output power, 10.5-dB small signal gain and peak power added efficiency of 24.6% from 13.6 to 14.2 GHz. This MMIC also achieved the best power densities (760 mW/mm²) at Ku band reported to date.

Original language	English
Pages (from-to)	154-156
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2006.890347
Publication status	Published - 2007 Feb

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2006.890347

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title = "A compact 6.5-W PHEMT MMIC power amplifier for Ku-band applications",

abstract = "A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554 mm2 (3.64 mm × 2.35 mm) is designed to fully match 50-Ω input and output impedance. Under 8 V and 2000 mA dc bias condition, the PA deliver 38.1 dBm (6.5 W) saturated output power, 10.5-dB small signal gain and peak power added efficiency of 24.6% from 13.6 to 14.2 GHz. This MMIC also achieved the best power densities (760 mW/mm2) at Ku band reported to date.",

author = "Lin, {Che Hung} and Liu, {Hong Zhi} and Chu, {Chen Kuo} and Huang, {Hou Kuei} and Liu, {Chi Chuan} and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern} and Wang, {Yeong Her}",

note = "Funding Information: Manuscript received July 5, 2006; revised October 14, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2215-E-006-001, the MOE Program for Promoting Academic Excellence of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan.",

year = "2007",

month = feb,

doi = "10.1109/LMWC.2006.890347",

language = "English",

volume = "17",

pages = "154--156",

journal = "IEEE Microwave and Wireless Components Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A compact 6.5-W PHEMT MMIC power amplifier for Ku-band applications

AU - Lin, Che Hung

AU - Liu, Hong Zhi

AU - Chu, Chen Kuo

AU - Huang, Hou Kuei

AU - Liu, Chi Chuan

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

AU - Wang, Yeong Her

N1 - Funding Information: Manuscript received July 5, 2006; revised October 14, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 94-2215-E-006-001, the MOE Program for Promoting Academic Excellence of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen scholarship, Tainan, Taiwan.

PY - 2007/2

Y1 - 2007/2

N2 - A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554 mm2 (3.64 mm × 2.35 mm) is designed to fully match 50-Ω input and output impedance. Under 8 V and 2000 mA dc bias condition, the PA deliver 38.1 dBm (6.5 W) saturated output power, 10.5-dB small signal gain and peak power added efficiency of 24.6% from 13.6 to 14.2 GHz. This MMIC also achieved the best power densities (760 mW/mm2) at Ku band reported to date.

AB - A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554 mm2 (3.64 mm × 2.35 mm) is designed to fully match 50-Ω input and output impedance. Under 8 V and 2000 mA dc bias condition, the PA deliver 38.1 dBm (6.5 W) saturated output power, 10.5-dB small signal gain and peak power added efficiency of 24.6% from 13.6 to 14.2 GHz. This MMIC also achieved the best power densities (760 mW/mm2) at Ku band reported to date.

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A compact 6.5-W PHEMT MMIC power amplifier for Ku-band applications

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