TY - GEN
T1 - A compact thermal-via packaging design of GaInP/GaAs collector-up HBTs in small high-power amplifiers
AU - Lee, P. H.
AU - Chou, Jung-Hua
AU - Tseng, H. C.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.
AB - We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.
UR - http://www.scopus.com/inward/record.url?scp=70149111781&partnerID=8YFLogxK
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U2 - 10.1109/ICIPRM.2008.4703000
DO - 10.1109/ICIPRM.2008.4703000
M3 - Conference contribution
AN - SCOPUS:70149111781
SN - 9781424422593
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
T2 - 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
Y2 - 25 May 2008 through 29 May 2008
ER -