A compact thermal-via packaging design of GaInP/GaAs collector-up HBTs in small high-power amplifiers

P. H. Lee, Jung-Hua Chou, H. C. Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.

Original languageEnglish
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: 2008 May 252008 May 29

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period08-05-2508-05-29

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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