This work presents an ultra-wideband (UWB) low noise amplifier (LNA) with active shunt-feedback technique for wideband and flat gain by using standard 0.18 μm CMOS processes. Different from past resistive shunt-feedback technique, the capacitor supersedes by a transistor in active shunt-feedback technique. The active shunt- feedback provides input matching generating a 50Ω real part with proper design and achieves flat gain from 2.5 GHz to 12 GHz. The UWB LNA achieved 11.4 ± 0.2 dB gains, 4.5 ~ 5.2 dB noise figure (NF), 13.5 mW power consumption at frequency 3.1 GHz to 10.6 GHz, - 15 dBm of 1-dB compression point (P1dB), and -3 dBm of input third intercept point (IIP3) at 6 GHz. The chip size including pads is only 0.6 × 0.5mm2.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials